BUK962R1-40E,118 Allicdata Electronics
Allicdata Part #:

568-10249-2-ND

Manufacturer Part#:

BUK962R1-40E,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 40V 120A D2PAK
More Detail: N-Channel 40V 120A (Tc) 293W (Tc) Surface Mount D2...
DataSheet: BUK962R1-40E,118 datasheetBUK962R1-40E,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V
FET Feature: --
Power Dissipation (Max): 293W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A FET is a three-terminal semiconductor device that has two essential characteristics: an input gate and a current drain. The BUK962R1-40E,118 is a type of FET that is also known as a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). This type of device is used in a wide range of applications and is often used as a switch or amplifier.

In a MOSFET, like BUK962R1-40E,118, the three terminals (called the Gate, Drain and Source) are connected according to a circuit diagram. The Gate and Source are connected to each other while the Drain is left open. The Gate is also connected to a voltage source. When a voltage is applied to the Gate, it produces a current in the Drain-Source path.

The MOSFET, BUK962R1-40E,118, has a wide range of applications. It is commonly used for switching, controlling the flow of current, amplifying signals and as a power amplifier. It is also used in power supplies, motor controls, consumer electronics and other complex electronic systems. It is also used to build integrated circuits, such as voltage regulators.

The working principle of the MOSFET, BUK962R1-40E,118, is fairly simple. When a voltage is applied to the Gate, it induces a change in the current flow from the Drain to the Source, depending on the type of circuit used. This causes the current to be modulated, creating a voltage and current waveform, called the drain-source voltage. The waveform can then be used to control the level of current flow in the circuit.

The MOSFET, BUK962R1-40E,118, is a highly versatile device that can be used in a variety of applications. It is commonly used in power supplies, motor control, consumer electronics and other complex electronic systems. It is also used to build integrated circuits, such as voltage regulators. Its unique characteristics, such as fast response times, make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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