Allicdata Part #: | 296-43314-2-ND |
Manufacturer Part#: |
CSD85302LT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 1.7... |
DataSheet: | CSD85302LT Datasheet/PDF |
Quantity: | 3000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.7W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-XFLGA |
Supplier Device Package: | 4-Picostar (1.31x1.31) |
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The CSD85302LT is a next-generation type of field effect transistor (FET) called a “logic-level” (LL) FET. LL FETs are specially designed to minimize on-state resistance and are suitable for applications in logic circuits, such as the driving of high-speed digital circuits, where it is important to minimize the difference between input voltage and output voltage. The CSD85302LT is an array of two FETs in one package, which provides greater flexibility and more efficient power management. In this article, we will explore the application field and working principle of the CSD85302LT.
Application Field
The CSD85302LT is designed for ultra-low-voltage logic applications where high-speed (GHz) data rates and higher power efficiency are required. It is used in a variety of applications, such as clock-data converters, level shifters, DC-DC converters, power management ICs, and low-power switches.
The CSD85302LT is particularly useful in handheld and battery-operated systems, due to its extremely low (sub-1V) logic threshold voltage and low “on” resistance, which helps minimize power consumption. This makes it an ideal choice for applications in smartphones, navigation systems, and other wireless devices, where power demands are usually very strict.
Working Principle
The CSD85302LT is composed of two FETs, each with its own gate, source, and drain. When voltage is applied to the gate of a FET, its channels of electrons (or holes) are opened, allowing current to flow between the source and drain. This action is called inversion, as the channel starts off “inverted” or blocking the flow of current and then opens up to allow current to pass when voltage is applied to the gate.
The two FETs in the CSD85302LT are connected in series, meaning that current is only allowed to pass between the source and drain when voltage is applied to both gates. This configuration, called “complex gate configuration”, has several advantages over traditional single-gate FETs. It enables lower operating voltages, faster switching speeds, and higher efficiency.
The CSD85302LT uses the “enhancement mode” of FET operation, meaning that voltage is applied to the gate to turn the channel on, while the gate is left floating (disconnected) to turn the channel off. This enables very fast switching times and allows the device to be used in applications where very low voltage (1V or less) is required. As a result, the CSD85302LT is suitable for use in low-power, low-noise electronic circuits, such as logic-level trigger circuits and clock signals.
Conclusion
The CSD85302LT is an innovative type of FET array designed for ultra-low-voltage logic applications. It is composed of two FETs in series and is capable of providing lower operating voltages, faster switching speeds, and higher efficiency. The “enhancement mode” of operation enables very fast switching and low power consumption, making it suitable for use in handheld and battery-operated systems. It is used in a variety of applications, such as clock-data converters, level shifters, DC-DC converters, power management ICs, and low-power switches.
The specific data is subject to PDF, and the above content is for reference
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