CSD88537NDT

Vgs(th) (Max) @ Id:	3.6V @ 250µA
Base Part Number:	CSD88537
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	2.1W
Input Capacitance (Ciss) (Max) @ Vds:	1400pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	15 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C:	15A
Drain to Source Voltage (Vdss):	60V
FET Feature:	Standard
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to CSD88537NDT Application Field and Working Principle

The CSD88537NDT is an array of N-channel, Insulated Gate Field Effect Transistors (IGFET), also known as Power MOSFETs. It is designed for use in power switching and high-speed switching applications such as linear regulators, power circuit breakers, and other high-frequency switching applications.

Power MOSFET Working Principle

The operation of the Power MOSFET, also known as an IGFET, is based on the principle of the depletion mode, which consists of a very thin oxide layer located between the MOSFET’s gate and the channel region. The oxide layer acts as an insulator, preventing current from flowing between the gate and the channel, except when a voltage differential is applied which is greater than the oxide breakdown voltage. The voltage differential creates a field across the oxide layer which effectively breaks down the insulation and allows current to flow through the MOSFET.

Characteristics and Components of CSD88537NDT

The CSD88537NDT is a Power MOSFET array composed of 18 cells. It features an on-state resistance of 10Ω and an off-state resistance of 70000Ω. The array is constructed using a single p-well/n-well process, which gives the device high packing density and low parasitic capacitance. Each cell contains an intrinsic body diode, which allows for bi-directional current flow and is used for protection purposes.

Applications for CSD88537NDT

The CSD88537NDT array of N-channel Power MOSFETs is dominated by the applications it is used for in the switching and high frequency conversion world. Its robust design, flexibility, and low on-state resistance are attractive features to many manufacturers. It is well suited for a variety of power switching applications, such as linear regulators, power circuit breakers, and other high-frequency switching applications.The CSD88537NDT is also well suited for other applications, such as switch mode power supplies, uninterruptible power supplies, and automotive power applications. It is also suitable for use in other applications where a large number of small devices are desirable, such as in the telecommunications, medical and data processing industries.

Conclusion

The CSD88537NDT array of N-channel Power MOSFETs is a versatile and powerful device with a wide range of applications. It has a fast switching speed, a low on-state resistance and a high packing density, making it an ideal choice for high-frequency switching and power applications. Its flexibility and robust construction make it suitable for use in a variety of industries and applications.

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