Allicdata Part #: | 296-43692-2-ND |
Manufacturer Part#: |
CSD87502Q2T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 30V 5A 6WSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 5A 2.3W Surfac... |
DataSheet: | CSD87502Q2T Datasheet/PDF |
Quantity: | 11250 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Rds On (Max) @ Id, Vgs: | 32.4 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 353pF @ 15V |
Power - Max: | 2.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WSON (2x2) |
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The CSD87502Q2T is a multi-channel, low-voltage, N-Channel trenchFET® array from Texas Instruments. It features an operational voltage range of 13V and a wide variety of channel configurations that make it suitable for various power management applications. This device is designed to provide exceptional switching performance and low on-resistance characteristics, making it an ideal choice for a variety of load switch, input port, and USB switch applications.
The CSD87502Q2T is designed to serve as a general-purpose load switch and distribution switch, providing fast and efficient routing of signals and power. Additionally, this device is ideal for use in low-power applications, such as portable and battery powered systems, where low-voltage operation is critical, as well as for industrial and automotive applications where reliable operation and speed is paramount.
The CSD87502Q2T features an N-Channel, trenchFET power MOSFET architecture. Using this technology, it delivers on-resistance ratings as low as 5.5mΩ, allowing for improved power efficiency and better heat dissipation than other commonly used MOSFETs. The on-resistance of this device is also extremely low, making it suitable for high-speed switching. Furthermore, this device is optimized for low-voltage applications, which allows for more power efficiency compared to larger voltage range devices.
Additionally, this device is designed with a variety of configurations, including a single-load switch, multiple-load switches, various current carrying capacity, and various voltage ratings. This provides added flexibility and allows it to be used in a wide range of applications, including power management, industrial, and automotive applications.
The CSD87502Q2T is rated for frequencies up to 1MHz, and can be driven by logic control signals in order to switch between on and off states. Unlike other MOSFETs, this device features an integrated charge pump, which eliminates the need for an external driver. Furthermore, the device features a patented P-channel FET design, which allows for better power consumption and performance characteristics.
The CSD87502Q2T is a highly efficient multi-channel, N-Channel trenchFET array, providing exceptional switching performance and very low on-resistance characteristics. It is suitable for a variety of power management, industrial, and automotive applications and can be used to provide fast and efficient routing of signals and power. The device features a variety of channel configurations, including a single-load switch, multiple-load switches, various current carrying capacity, and various voltage ratings, making it an ideal choice for low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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