CSD87384M Allicdata Electronics
Allicdata Part #:

296-40012-2-ND

Manufacturer Part#:

CSD87384M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET 2N-CH 30V 30A 5PTAB
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 30A 8W ...
DataSheet: CSD87384M datasheetCSD87384M Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (5x3.5)
Description

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The CSD87384M is an integrated MOSFET array compatible with the small form factor package, providing reliable performance and high current control features. It works by using a combination of both N-channel and P-channel MOSFETs to provide a cost-effective and reliable solution for a variety of application areas.

The CSD87384M can be used as a low-resistance power switch for high-current applications, such as in automotive, consumer electronics, and industrial applications. It can provide superior current-handling capabilities over traditional bipolar junction transistors (BJTs) or small-signal MOSFETs, allowing for higher performance and ultralow on-resistance switches. The device also features a built-in low-side, low-side “smart-switch” array and a dedicated charge pump circuit, allowing designers to reduce their part count and improve the device’s power efficiency. Additionally, the device is capable of controlling a power range from FETs of up to 20V.

The device is also particularly well suited for power-up/power-down sequencing in high current applications, due to its high speed switching capability. Its low-side, low-side “smart-switch” array design helps reduce wiring complexity and enables fast setup times. Additionally, the device’s built-in charge pump circuit and on-chip compensation enable it to provide a stable, accurate and lower current switching for a variety of applications. In addition, the device’s thermal management system helps reduce power dissipation during power-on and power-down transitions.

The device also features an integrated MOSFET array, and can be programmed to control the output voltage, current, and/or frequency of the device. It also features an integrated under-voltage lockout (UVLO) and over-current protection (OCP) circuit to help protect the device and surrounding components from the effects of overloads, overvoltage and static electricity. Furthermore, the device incorporates a low-side switch, allowing it to be used to control a variety of other circuits, such as PWM control and power sequencing.

The CSD87384M is a reliable and economical solution for applications requiring tight current control, high switching speed and low RDSon. It offers a wide range of operating voltage and temperature range, making it suitable for a variety of applications. Its high control speeds, coupled with its advanced protective features and low thermal dissipation, make it an excellent choice for a variety of power control applications. As such, it is an excellent choice for high current control in a low-cost, small form factor package.

The specific data is subject to PDF, and the above content is for reference

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