| Allicdata Part #: | 296-40012-2-ND |
| Manufacturer Part#: |
CSD87384M |
| Price: | $ 0.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET 2N-CH 30V 30A 5PTAB |
| More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 30A 8W ... |
| DataSheet: | CSD87384M Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.53000 |
| 10 +: | $ 0.51410 |
| 100 +: | $ 0.50350 |
| 1000 +: | $ 0.49290 |
| 10000 +: | $ 0.47700 |
| Series: | NexFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 30A |
| Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 25A, 8V |
| Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 15V |
| Power - Max: | 8W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 5-LGA |
| Supplier Device Package: | 5-PTAB (5x3.5) |
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The CSD87384M is an integrated MOSFET array compatible with the small form factor package, providing reliable performance and high current control features. It works by using a combination of both N-channel and P-channel MOSFETs to provide a cost-effective and reliable solution for a variety of application areas.
The CSD87384M can be used as a low-resistance power switch for high-current applications, such as in automotive, consumer electronics, and industrial applications. It can provide superior current-handling capabilities over traditional bipolar junction transistors (BJTs) or small-signal MOSFETs, allowing for higher performance and ultralow on-resistance switches. The device also features a built-in low-side, low-side “smart-switch” array and a dedicated charge pump circuit, allowing designers to reduce their part count and improve the device’s power efficiency. Additionally, the device is capable of controlling a power range from FETs of up to 20V.
The device is also particularly well suited for power-up/power-down sequencing in high current applications, due to its high speed switching capability. Its low-side, low-side “smart-switch” array design helps reduce wiring complexity and enables fast setup times. Additionally, the device’s built-in charge pump circuit and on-chip compensation enable it to provide a stable, accurate and lower current switching for a variety of applications. In addition, the device’s thermal management system helps reduce power dissipation during power-on and power-down transitions.
The device also features an integrated MOSFET array, and can be programmed to control the output voltage, current, and/or frequency of the device. It also features an integrated under-voltage lockout (UVLO) and over-current protection (OCP) circuit to help protect the device and surrounding components from the effects of overloads, overvoltage and static electricity. Furthermore, the device incorporates a low-side switch, allowing it to be used to control a variety of other circuits, such as PWM control and power sequencing.
The CSD87384M is a reliable and economical solution for applications requiring tight current control, high switching speed and low RDSon. It offers a wide range of operating voltage and temperature range, making it suitable for a variety of applications. Its high control speeds, coupled with its advanced protective features and low thermal dissipation, make it an excellent choice for a variety of power control applications. As such, it is an excellent choice for high current control in a low-cost, small form factor package.
The specific data is subject to PDF, and the above content is for reference
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CSD87384M Datasheet/PDF