CSD88599Q5DC Discrete Semiconductor Products |
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Allicdata Part #: | 296-48289-2-ND |
Manufacturer Part#: |
CSD88599Q5DC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2 N-CH 60V 22-VSON-CLIP |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 60V 12W Su... |
DataSheet: | CSD88599Q5DC Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 4840pF @ 30V |
Power - Max: | 12W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 22-PowerTFDFN |
Supplier Device Package: | 22-VSON-CLIP (5x6) |
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CSD88599Q5DC Application Field and Working Principle
The CSD88599Q5DC is a type of transistor that falls under the category of Field-Effect Transistor Arrays (FETs). FETs are a type of semiconductor device that acts as a switch or gate for the flow of electrical current. The CSD88599Q5DC is a surface mounted device (SMD) FET array, used primarily in power management applications.
The CSD88599Q5DC is commonly used in a wide range of electronic power switching applications. Its primary function is to switch high currents on and off quickly, in a controlled manner. This allows for efficient management of power in various electronic systems, such as generators, motors, motorsports vehicles, agricultural and robotic vehicles, etc. In these applications, the FET array can be used to turn a device on or off, or to increase the power going to a motor or generator when necessary.
The CSD88599Q5DC is also widely used in analog applications, such as audio amplifiers and wireless receivers. FETs are often preferred over other transistors in these applications because they allow for higher operating frequencies. Additionally, they allow for higher input and output impedance, which is beneficial for audio amplifiers.
The CSD88599Q5DC is a monolithic FET array with five N-channel enhancement-mode metal oxide semiconductor (MOSFETs) transistors. The class of device is an array, meaning that it contains multiple transistors in the same package, providing greater functionality in a smaller size. Each FET transistor is capable of switching up to 10A of current, making it suitable for higher current applications where additional transistors would be necessary. Each transistor is controlled individually by a bias voltage, which is input from the gate of the device.
When a voltage is applied to the gate terminal, it creates an electric field which in turn causes a current to flow across the junction between the gate and the source of the FET. This current, called the drain-source current, turns the transistor “on” and allows the flow of current through it. When the voltage applied to the gate is removed, the transistor “turns off” and the flow of current stops. This is how the CSD88599Q5DC works as an electrical switch, allowing current to flow through it when triggered and then cutting off the current when it’s no longer required.
In summary, the CSD88599Q5DC is a monolithic FET array with five N-channel enhancement-mode metal oxide semiconductor (MOSFETs) transistors. It is primarily used in power management applications, where it is used to switch high currents on and off quickly and efficiently. It is also widely used in analog applications, such as audio amplifiers and wireless receivers. Each FET transistor is controlled individually by a bias voltage, which is input from the gate of the device. When the voltage is applied to the gate, it creates an electric field which in turn causes a current to flow, turning the transistor “on” and allowing the flow of current through it. When the voltage is removed, the current stops and the device “turns off”.
The specific data is subject to PDF, and the above content is for reference
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