Allicdata Part #: | 296-47497-2-ND |
Manufacturer Part#: |
CSD87503Q3ET |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | 30-V DUAL N-CHANNEL MOSFET, COMM |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Source 30V ... |
DataSheet: | CSD87503Q3ET Datasheet/PDF |
Quantity: | 750 |
250 +: | $ 0.42260 |
500 +: | $ 0.37346 |
1250 +: | $ 0.29484 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 15V |
Power - Max: | 15.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
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The CSD87503Q3ET is a transistor-based integrated circuit (IC) belonging to the family of Field Effect Transistors (FETs), specifically to the group of Metal Oxide Semiconductor FETs (MOSFETs) a type of switch array. The CSD87503Q3ET is used for voltage and current control as well as for power optimization of a variety of circuits.
A Field-Effect Transistor is a three-terminal device, where the source (S), drain (D) and gate (G) are used for electrical connection. A FET’s mode of operation is that of a voltage-controlled device, since the electrical behavior of the device’s channel is regulated by a voltage applied to the gate. When voltage is applied to the gate, it generates a field that modulates the conductivity of the channel region either by creating an effect that increases or decreases its conductivity.
The CSD87503Q3ET is an N-channel device, meaning that the channel region is initially of high resistivity, until a voltage is applied to the gate. Such connection makes the device best suited to applications where load conduction is temperature-dependent and requires MOSFET-Device control.
The CSD87503Q3ET can handle very high switching frequencies, thus making it perfect for power supply applications and for switching between multiple power supplies such as those found in data centers, communications equipment and other applications where power is provided from multiple sources. For flexible and reliable power control, the CSD87503Q3ET can perform multiple tasks, including current switching, overcurrent protection, under-voltage protection and load current monitoring.
Stability and safety are essential for conditions found in industrial applications, thus, the CSD87503Q3ET is designed to handle these conditions. To eliminate the risk of electrical arcing or current leakage, the CSD87503Q3ET features an electrostatic discharge (ESD) protection in the gate and drain regions.
The CSD87503Q3ET also features a built-in thermal shutdown protection, meaning that when the current load is greater than a predetermined amount, the device will automatically shut down to prevent damage and to keep the circuit safe. Furthermore, the CSD87503Q3ET also features internal voltage and current sensing, overvoltage protection and short-circuit protection.
The CSD87503Q3ET can be used to manage power in a number of applications, including electric motors, power supplies, battery packs, converters and inverters, solar and LED lighting, communication systems, and robotics. With these capabilities, the CSD87503Q3ET is an excellent choice for applications requiring precise power control and efficient voltage and current regulation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
CSD87503Q3ET | Texas Instru... | 0.47 $ | 750 | 30-V DUAL N-CHANNEL MOSFE... |
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