Allicdata Part #: | CSD87355Q5DT-ND |
Manufacturer Part#: |
CSD87355Q5DT |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 30V 45A 8LSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 4... |
DataSheet: | CSD87355Q5DT Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.21335 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 45A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1860pF @ 15V |
Power - Max: | 2.8W |
Operating Temperature: | -55°C ~ 155°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerLDFN |
Supplier Device Package: | 8-LSON (5x6) |
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The CSD87355Q5DT is an example of an integrated circuit transistor, a type of active semiconductor device that can play a powerful role in analog and digital circuits across many technology sectors. Many transistors are arrays containing a number of transistors on a single chip, and the CSD87355Q5DT is no exception. This transistor is a “power array” transistor in the form of a monolithic integrated circuit (MOSFET) and has a variety of uses in digital or analog circuit design.
As a MOSFET, the CSD87355Q5DT is designed to convert electrical power into mechanical energy. It has a source connected to a drain and gate, so that by varying the voltage at the gate, the current flowing between the source and drain can be controlled. This makes the transistor both sensitive and effective – it can be used to effectively amplify signals or to switch devices on or off without too much current having to be provided. It is also known for its low power consumption rate and its ability to withstand high temperatures.
Typical applications of the CSD87355Q5DT include bridging, switching, and interfacing. This device is suitable for many applications requiring a high current, such as power amplifiers or power supplies, and is particularly useful for driving inductive loads such as motors or solenoids. Its versatility and robust performance have made it popular in many applications, including in personal computing, telecommunications, agriculture, and industry.
The CSD87355Q5DT is a power array transistor with a split gate structure. It has two independent gates, one on each side of the source-drain channel. This allows the transistor to be used in both digital and analog circuits. Digital circuits benefit from the transistor\'s ability to accurately control a current, while analog circuits benefit from the higher power handling capabilities afforded by the device. This flexibility makes the CSD87355Q5DT more attractive to many types of end users.
The CSD87355Q5DT is available in a wide range of voltages, making it suitable for applications that require such a variety. It has a maximum operating voltage rating of 5.5V and operating temperature range of 0-70 degrees Celsius. The device has impressive thermal characteristics with a low total power dissipation of 76mW, and an on resistance of 2 ohms. Its high-density configuration makes it ideal for use in tightly packed circuits requiring few components.
All in all, the CSD87355Q5DT is a powerful transistor with a variety of useful applications. Its power array design makes it suitable for a wide range of analog and digital applications, and its excellent thermal characteristics make it well-suited for use in high power applications. With its low power consumption rate and split gate structure, the CSD87355Q5DT is an attractive package and a great choice when designing circuits.
The specific data is subject to PDF, and the above content is for reference
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