Allicdata Part #: | 296-28327-2-ND |
Manufacturer Part#: |
CSD87351Q5D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 30V 32A 8LSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 32A 12W Surfac... |
DataSheet: | CSD87351Q5D Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Base Part Number: | CSD87351 |
Supplier Device Package: | 8-LSON (5x6) |
Package / Case: | 8-PowerLDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 12W |
Input Capacitance (Ciss) (Max) @ Vds: | 1255pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 7.6 mOhm @ 20A, 8V |
Current - Continuous Drain (Id) @ 25°C: | 32A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD87351Q5D Application Field and Working Principle
Compact Silicon Devices Limited (CSD) CSD87351Q5D is an advanced mode logic family of 31 Volts DirectFET MOSFET devices.
Featuring both N and P-Channel MOSFETs, the CSD87351Q5D offers the designers a wide range of functions and applications. In terms of its application fields, the main target sectors are Power Management, Power Distribution, Automotive, and Industrial.
The device is available in two types, normal and custom. The normal version provides for two programmable channel configurations, 5 channel, and 4 channel configuration. The custom version provides different channel configurations, ranging from 8 to 12 channel.
The CSD87351Q5D offers both inrush current detection and temperature sensing capabilities. This advanced feature allows the device to detect current in rush and over-temperature conditions and take appropriate action, such as limiting the output current, or reducing the switching frequency, respectively.
Regarding its working principle, the CSD87351Q5D consists of a combination of the Field Effect Transistor (FET) and the Metal Oxide Semiconductor FET (MOSFET). In this device, the power MOSFETs are integrated in an SO8 package, thus allowing high-power switching while minimizing footprints. A logic-level voltage threshold is programmed onto the device, thus allowing an easy drive from the logic gates and eliminating the need for an external Logic-in/power-out voltage converters.
Additionally, the device is equipped with an array of over-temperature and fault-sensing features and monitors the state of each FET individually. As a result, when an over-temperature of fault condition is detected, the device automatically takes corrective action by either disabling output currents or reducing the switching frequency.
To sum up, the CSD87351Q5D is an innovative device that offers designers a wide range of functions and applications. With its FET and MOSFET device architecture and its advanced feature such as inrush current detection and temperature sensing, it provides power management, power distribution, automotive, and industrial sectors with a versatile and dependable tool to meet their demands.
The specific data is subject to PDF, and the above content is for reference
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