CSD87353Q5D Discrete Semiconductor Products

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The CSD87353Q5D is a type of field effect transistor (FET) that belongs to a class of devices known as insulated gate bipolar transistors (IGBTs). IGBTs are transistors in which the gate terminal is insulated from the source and drain terminals. This allows for a high-speed switching action with low switching losses. The CSD87353Q5D is a type of MOSFET, or metal oxide semiconductor (MOS) field effect transistor. It is an array device, which means that it contains multiple FETs in a single package.

The CSD87353Q5D is a n-channel vertical double diffused metal oxide semiconductor (DMOS) FET array that is designed for power switching applications. The device has a maximum drain-to-source voltage rating of 400V and a drain current rating of 320A. The maximum operating junction temperature is 175°C and the maximum forward transconductance is 10.6mS. Additionally, the CSD87353Q5D has an on-state resistance of 0.076Ω.

The CSD87353Q5D has several applications, primarily in power switching applications. It is commonly used for motor control, such as in electric vehicles, and for switch mode power supplies. The device can be used for high voltage switching, such as on-off control of lighting, small motors, and solar inverters. Additionally, it can be used for DC-DC converters, class-D amplifiers, and battery management systems.

The working principle of the CSD87353Q5D is based on the conventional MOSFET structure and operation. An insulated gate controls a thin conducting channel between two ohmic contacts - the source and the drain. The current flows from the source to the drain when a positive voltage is applied to the gate with respect to the source. When the gate voltage is increased, the conducting channel is further widened and the current (drain to source current or IDS) increases. The device is turned off when the gate-source voltage is decreased, making the channel narrower and reducing the current flow.

The CSD87353Q5D is a versatile and robust FET array that can be used in a variety of power switching applications. It is designed to operate at high voltage levels and has a high current rating, making it suitable for switching a large amount of power. Additionally, it features low on-state resistance, which ensures low power losses during operation. Its array package makes it easy to use, particularly when multiple FETs are needed.

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