Allicdata Part #: | 296-35792-2-ND |
Manufacturer Part#: |
CSD87588N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 30V 25A 5PTAB |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 25A 6W ... |
DataSheet: | CSD87588N Datasheet/PDF |
Quantity: | 97500 |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Base Part Number: | CSD87588 |
Supplier Device Package: | 5-PTAB (3x2.5) |
Package / Case: | 5-XFLGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 6W |
Input Capacitance (Ciss) (Max) @ Vds: | 736pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 4.1nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 15A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Half Bridge) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD87588N offers very low static as well as dynamic on-resistance, which is combined with a low gate charge and low gate threshold voltage. In this article, we will look at the application field and working principle of CSD87588N.
Application Fields of CSD87588N
The CSD87588N device is designed to be used in a variety of applications as it combines superior performance, reliability and cost-effectiveness.
The CSD87588N is a very versatile device with wide range of applications for use in battery powered and other hand held portable applications. Due to its low power consumption, low drive level, excellent off-state performance, the CSD87588N is suitable for use in applications such as:
- Power MOSFET,
- Low dropout linear voltage regulator,
- High-side and low-side switches,
- High-current switches and
- DC-DC converters.
Additionally, CSD87588N can also be utilized in smart phone power stages, AC/DC adapters and supplementary power supply for the purpose of saving power consumption in these applications.
Working Principle of CSD87588N
The CSD87588N is built on a D-MOSFET (aka DMOS) (Depletion Mode MOSFET) architecture. As its name implies, DMOS structures are depletion-mode devices, meaning that the body voltage is applied via the gate voltage, turning it "ON" automatically without the need of an additional gate signal. The basic structure of the CSD87588N is that it has two depletion mode MOSFETs which are connected in parallel and have their sources connected together. This connectivity makes a symmetrical arrangement of the source and gate. The drain is the output of the device. This configuration allows the CSD87588N to have a very low on-resistance, which is ideal for low power applications like linear voltage regulation and power sequencing. The low gate charge and low gate threshold voltage also contribute to a low power switch.
In order to turn the device “OFF”, the gate voltage of the CSD87588N must be reduced to its threshold voltage. This is done to reduce the current flow and the associated power dissipation. The gate charge of the device is low, so the required voltage to turn the device “OFF” is much lower than it would be with a normal MOSFET. This makes the CSD87588N well suited for low power applications.
Conclusion
The CSD87588N is an ideal choice for a wide range of applications due to its low power consumption, low gate charge, and low gate threshold voltage. Its depletion mode architecture makes it suitable for low voltage and low power applications, and its low on-resistance makes it ideal for switching applications. The CSD87588N is a reliable and cost-effective device for battery powered and other hand held portable applications.
The specific data is subject to PDF, and the above content is for reference
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