CSD87313DMST Discrete Semiconductor Products

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The CSD87313DMST is an integrated semiconductor device that belongs to the family of Transistors–FETs, MOSFETs–Arrays. This device combines several FETs into one package, making it ideal for a range of applications. This article explains the application field and working principle of the CSD87313DMST.

The integrated semiconductor device can be used in applications such as power supplies, high-voltage switching, power management, motor control, and communication systems. The device also has the ability to handle large currents. Its performance is enhanced by the use of salicided gate technology. This technology allows the device to achieve higher on-resistance and lower gate charge than any other competing device.

The CSD87313DMST is a four-terminal device consisting of three n-channel MOSFETs in parallel, each with its own gate connections. This arrangement improves the characteristics of the device, as it allows for a low on-resistance and fast switching speed.

The device can also be used in gate driver applications, where a high number of FETs need to be switched very quickly. The fast switching speed and high current handling capacity of the device make it ideal for this application.

The working principle of the CSD87313DMST is based on the behavior of the electrons within the drain, source and gate connections. When a voltage is applied to the gate, electrons are attracted to the gate and away from the source terminal. This reduces the resistance between the drain and source terminals, allowing current to flow.

The drain voltage is higher than the source voltage as a result of the current flow, which continues until the drain voltage equals the source voltage. At this point the current flow stops and the device is in its off state.

The CSD87313DMST is a very useful integrated semiconductor device, as it combines different FETs into one package. It is ideal for a range of applications such as power supplies, high-voltage switching, power management, motor control, and communication systems. The device also has the ability to handle large currents and its performance is enhanced by the use of salicided gate technology. The working principle of the device is based on the behavior of the electrons within the drain, source and gate connections.

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