CSD87335Q3D Allicdata Electronics
Allicdata Part #:

296-43949-2-ND

Manufacturer Part#:

CSD87335Q3D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V POWERBLOCK
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V ...
DataSheet: CSD87335Q3D datasheetCSD87335Q3D Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (3.3x3.3)
Description

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The CSD87335Q3D is a part of an array of transistors based on field-effect technology, which is supplied by Texas Instruments. The device is well-suited for use in a wide range of applications and is noted for its high performance and reliability. The CSD87335Q3D has a rated drain-source breakdown voltage of 800V, a gate threshold voltage of 0.5V, and a drain-source on-resistance of 0.1mΩ. It is an ideal choice for applications that require higher frequencies, power delivery, and improved efficiency.

Introduction

A field-effect transistor (FET) is a three-terminal device that usually consists of two terminals, the source and drain, and the gate. It has a number of terminals for controlling the transfer of current between the source and the drain. FETs are the main building blocks of digital integrated circuits and are used in a variety of applications, from digital logic circuits to radio-frequency amplifiers. FETs are also used as switches and are commonly used in switches for analog signals as well.

Working Principle of the CSD87335Q3D

The CSD87335Q3D is a transistors array based on field-effect technology. The principle behind the operation of this device is that it controls the movement of electrons by using an electrical field. The electrical field is created by the gate voltage and the current that flows through the device. The FET has three distinct regions: the source, drain and gate. When the gate potential is increased, the current between the source and drain increases, and when the gate voltage is lowered, the current between the source and drain decreases.

The transistor works by controlling the amount of current that flows through the channel between the source and drain. Depending on the gate voltage, the FET can be operated in three distinct ways. The FET can either be off, in which case the channel between the source and drain is shut off; partially on, in which case the current between the source and drain is adjustable; or fully on, in which case the maximum current between the source and drain is achieved.

The CSD87335Q3D is a series of transistors which is especially known for its high performance, reliability and a rated drain-source breakdown voltage of 800V. The device has a low gate threshold voltage of 0.5V and a drain-source on-resistance of 0.1mΩ. Due to its low threshold voltage and low on-resistance, the CSD87335Q3D is ideal for applications that require higher frequencies and improved efficiencies.

Applications of the CSD87335Q3D

The CSD87335Q3D is well-suited for a number of applications that require higher frequencies, power delivery, and improved efficiency. Due to its low gate threshold voltage and low on-resistance, the CSD87335Q3D is particularly suitable for switching applications. It is often used in radio and TV circuits and in audio amplifiers, due to its high frequency operation and improved efficiency. Additionally, the device is highly suitable for use in power converters, such as AC/DC and DC/DC, as well as for power management in portable electronic equipment and battery chargers.

Furthermore, the CSD87335Q3D is often used in automotive applications, such as vehicle lighting and audio systems, due to its ability to handle higher voltage levels. It is also used in power management for smartphone and tablet computers. In addition, the CSD87335Q3D is also used in motor control and signal processing applications.

Conclusion

The CSD87335Q3D is a field-effect transistor array based on field-effect technology. The device is particularly suitable for applications that require higher frequencies and improved efficiencies, due to its low gate threshold voltage and low drain-source on-resistance. The device is commonly used in radio and TV circuits, audio amplifiers, power management in portable electronic equipment, automotive applications, motor control, and signal processing. The CSD87335Q3D is noted for its high performance and reliability, making it an ideal choice for a wide array of applications.

The specific data is subject to PDF, and the above content is for reference

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