Allicdata Part #: | CSD86336Q3D-ND |
Manufacturer Part#: |
CSD86336Q3D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | 25V POWERBLOCK N CH MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 25V 20A (Ta... |
DataSheet: | CSD86336Q3D Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA, 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 45V, 7.4nC @ 45V |
Input Capacitance (Ciss) (Max) @ Vds: | 494pF @ 12.5V, 970pF @ 12.5V |
Power - Max: | 6W |
Operating Temperature: | -55°C ~ 125°C |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
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Modern technology is dependent on a variety of components, including transistors and FETs, as well as many other devices. Among these components is the CSD86336Q3D, an array of MOSFETs. In this article, we will discuss the application fields and working principles of the CSD86336Q3D.
The CSD86336Q3D is an array of N-channel MOSFETs, built on a single silicon die. This component is typically used in automotive applications, such as powertrain and alternator control. The CSD86336Q3D array is designed to provide high power density and reliable circuit switching, as well as to reduce system cost and board space. Additionally, the CSD86336Q3D features low electrical noise, high speed switching and high current handling capabilities.
The basic operation of the CSD86336Q3D array is based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). A MOSFET is an active component, meaning that it can be used to amplify an electric signal. In a MOSFET, electrons can move freely between two extremely thin layers (the source and the drain) of a substrate. The flow of electrons is controlled by a third layer (the gate), which is insulated from the source and the drain. A voltage applied to the gate will induce a current between the source and drain and is used to control the component.
The CSD86336Q3D array utilizes the same principles as single MOSFETs, but with the additional benefit of increased power handling capability. The CSD86336Q3D array is composed of 8 individual MOSFETs, arranged in a single package. Each of the 8 MOSFETs can be connected in various pathways, depending on the application and desired result. The individual MOSFETs are integrated with a logic chip, which is used to control the operation and parameters of each device.
The CSD86336Q3D array is a versatile and reliable component, perfect for applications requiring high power density and accurate, efficient switching. It is highly suitable for powertrain and alternator control in automotive systems, as well as DC-DC converters, UPS systems and high-power output circuits. Additionally, the CSD86336Q3D features low electrical noise and high speed switching, which make it well-suited for a variety of applications.
In conclusion, the CSD86336Q3D array is a versatile and reliable component, capable of meeting the demands of a variety of applications. It offers the benefits of increased power density, integrated control, and low electrical noise, making it the perfect choice for powertrain and alternator control, DC-DC converters, UPS systems and high-power output circuits.
The specific data is subject to PDF, and the above content is for reference
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