CSD86311W1723

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The CSD86311W1723 is an array of three N-channel enhancement mode vertical double Diffused Metal Oxide Semiconductor (DMOS) transistors, intended for load switching and linear applications. This array is robust and allows for better performance in a broad range of high-current, high-power applications and is designed to operate from a supply voltage of 4.5V.

The CSD86311W1723 has three identical N-channel DMOS transistors which features high peak current and low on-resistance. The N-channel DMOS transistors can carry out both linear and switching operations, hence providing a high-quality output signal. The supply voltage has a wide range from 4.5V to 20V, allowing for higher voltages to be applied, and enabling a wide range of applications.

Its array structure provides very good power efficiency, as the drain current rating is higher than multiple discrete DMOS transistors, and a significant power savings is achieved by the array. The array structure also reduces system size and power losses. There is a high degree of thermal stability, increasing safety and reliability.

The CSD86311W1723 offers several advantages over other array transistors. Its internal bi-directional protection circuitry provides superior ESD protection, and the built-in Under Voltage Lock Out (UVLO) provides over-current and over-temperature protection, as well as positive supply polarity. The device is also fail-safe and can be used in applications that require long-term reliability.

The operating principle of the CSD86311W1723 is based on an N-channel DMOS structure, which is basically a combination of a crystalline silicon-doped MOSFET and a p-type well. The DMOS is designed such that it enables both switching and linear operations. The bias current between the source and the gate creates a channel between the source and the drain. The channel is formed when electrons move towards the gate, resulting in an inversion layer forming around the channel. The electrons in the inversion layer control the current flow between the drain and the source.

The array can be used in a variety of applications including linear and pulse load switching, regulators and power switches. It can also be implemented in Amplifiers, audio systems, LED lighting and automotive applications, to name a few. The array also offers protection against thermal overload, system brownouts, ESD and under-voltage.

Overall, the CSD86311W1723 is an array of three N-channel DMOS transistors which is designed for a wide range of high-power, high-current applications. The array structure provides superior power efficiency and reduced system size, as well as thermal stability and improved reliability. The device is fail-safe and provides over-current, over-temperature and ESD protection. It operates based on an N-channel DMOS structure and can be used in linear and pulse load switching, lighting, amplifiers and automotive applications.

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