Allicdata Part #: | CSD86356Q5D-ND |
Manufacturer Part#: |
CSD86356Q5D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | 25V POWERBLOCK N CH MOSFET |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 25V 40A (Ta... |
DataSheet: | CSD86356Q5D Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 1.85V @ 250µA, 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.9nC @ 4.5V, 19.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.04nF @ 12.5V, 2.51nF @ 12.5V |
Power - Max: | 12W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
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The CSD86356Q5D is a transistor array offered by Texas Instruments. It consists of two N-channel MOSFETs with a single common source and drain connection. As a power switch, it provides high current carrying capability, low on-resistance and high switching speed.
The CSD86356Q5D has multiple applications as an efficient power switch such as DC/DC converters, H-bridges, relay and motor control, power converters, and providing protection to battery and photovoltaic systems. It is suitable for high side and low side switches in industrial, automotive and consumer applications.
The CSD86356Q5D device consists of a nickel bar gate which electrically connects the two power MOSFETs together. The gate has two N-channel enhancement mode MOSFETs with a single common source and drain terminal. The output power is controlled by the gate voltage between the two transistors that share the common source and drainage terminals.
The two N-channel MOSFETs provided on the CSD86356Q5D are independently rated for a VDSS of 50 volts maximum and a VGS of 20 volts maximum. The maximum drain current is 20 Amps while the maximum gate current is 130 mA. It has an on-state resistance of 2.5 mOhms at 25°C and a total gate charge of 4.0 nC. The operating temperature range is –40°C to +125°C.
The working principle of the CSD86356Q5D is based on the conduction behavior of the MOSFET transistors. The gate voltage is used to control the current flow through the transistors. When the gate voltage is applied, the transistors will start conducting. As the voltage is increased, the current in the transistors will increase and the resistance of the transistor will decrease. This will create a lower voltage drop for the device and higher current capability. If the gate voltage is decreased, the current will decrease and the resistance will increase until it reaches its off-state.
The CSD86356Q5D is an ideal choice for industrial, automotive and consumer applications. Its flexibility and scalability allow it to be used in many different applications. It is a robust and efficient power switch and provides an excellent choice for a variety of power management requirements.
The specific data is subject to PDF, and the above content is for reference
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