CSD87501L Allicdata Electronics
Allicdata Part #:

296-40013-2-ND

Manufacturer Part#:

CSD87501L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET 2N-CH 30V 10PICOSTAR
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 2.5...
DataSheet: CSD87501L datasheetCSD87501L Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-XFLGA
Supplier Device Package: 10-Picostar (3.37x1.47)
Description

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The CSD87501L is an Array consisting of four n-Type MOSFETs. As part of a high-power motor drive application, it is specifically designed for operation in the high-current and high-voltage environment. The device is provided in a PowerFLAT™-5x6 low profile surface-mount package which enables superior electrical, thermal and mechanical performance.

The CSD87501L has a wide range of applications including power MOSFETs, high-current switching systems and electrically driven relays. It is especially suitable for applications where high-power signals need to be switched quickly, such as in control systems, motor controllers and power converters. The array also enables high-current and high-voltage gate-drive design with minimal external components and optimal thermal performance. This makes it especially suitable for use in applications such as high-power motor drives, power supplies and motor controllers.

The CSD87501L’s working principle is based on the Field Effect Transistor (FET). FETs are transistors with three terminals, or electrodes, that consists of a source, drain and gate. The gate is used to control the voltage level created by the source and drain, allowing current to flow through the transistor when the gate’s voltage level is above a certain threshold.

When used in an array, the four n-Type MOSFETs form two paired channels of two devices each controlled by a single gate. This allows for increased current handling capability, higher switching speeds and improved thermal performance. In a motor drive application, the paired devices can be used as two separate switch devices, or in a parallel configuration. This allows for quick switching of high-power signals, as well as improved thermal and power performance.

The CSD87501L provides superior electrical and thermal performance for applications requiring high current and high voltage operation. With its low profile package, the device enables superior thermal and mechanical performance in applications such as motor controllers and power supplies. Furthermore, the four n-Type MOSFETs provide increased reliability and improved switching speeds, making it suitable for applications requiring precise control.

The specific data is subject to PDF, and the above content is for reference

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