Allicdata Part #: | 296-37187-2-ND |
Manufacturer Part#: |
CSD85312Q3E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 20V 39A 8VSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Source 20V ... |
DataSheet: | CSD85312Q3E Datasheet/PDF |
Quantity: | 2500 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 39A |
Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 2390pF @ 10V |
Power - Max: | 2.5W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
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CSD85312Q3E Application Field and Working Principle
The CSD85312Q3E is a metal oxide semiconductor field effect transistor (MOSFET) array device manufactured by Texas Instruments. It is designed to perform multiple tasks and can be used in many different applications.
The CSD85312Q3E is a 4-bit wide, 8-channel N-channel array device. It contains an array of two N-channel enhancement mode power MOSFETs and a low-side switch. Each switch has an independent voltage controlled gate drive input and includes a resistance protection diode which limits gate to source overdrive.
Application Fields
The CSD85312Q3E is designed to be used in multiple applications including:
- Automotive power management
- Industrial power systems
- Medical equipment
- Lighting systems
- Inverters
It is also suitable for use in high power dc-dc converters, motor control, class D audio amplifiers, power resistors, and custom regulated power supplies.
Working Principle
The CSD85312Q3E works on the principle of voltage conversion. It converts a low AC or DC input voltage to a higher output DC or AC output voltage. It has two input voltage levels that are controlled by the gate drive input. The gate drive input is connected to the source voltage, which switches on and off the load. When the load is on, the output current flows through the channel and the output voltage is created.
The CSD85312Q3E also contains a low side switch, which is connected to the drain of the MOSFETs. The low side switch opens and closes the connection between the output voltage and the drain voltage. This allows the output voltage to be controlled, and it also prevents the voltage spike caused by the output current.
The CSD85312Q3E has a low on-resistance, which is suitable for high current applications. This allows the device to handle up to 8 A without significant thermal issues. The on-resistance is switched between high and low resistance to reduce power loss.
Conclusion
The CSD85312Q3E is a 4-bit wide, 8-channel N-channel array device. It contains an array of two N-channel enhancement mode power MOSFETs and a low-side switch. It is designed to be used in multiple applications including automotive power management, industrial power systems, medical equipment, lighting systems, inverters and more. It works on the principle of voltage conversion and is capable of handling up to 8 amps without significant thermal issues.
The specific data is subject to PDF, and the above content is for reference
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