| Allicdata Part #: | 296-38677-2-ND |
| Manufacturer Part#: |
CSD87501LT |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET 2N-CH 30V 10PICOSTAR |
| More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 2.5... |
| DataSheet: |  CSD87501LT Datasheet/PDF |
| Quantity: | 250 |
Specifications
| Series: | NexFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) Common Drain |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | -- |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Power - Max: | 2.5W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 10-XFLGA |
| Supplier Device Package: | 10-Picostar (3.37x1.47) |
Description
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CSD87501LT is an advanced type of field effect transistor (FET) with an integrated array of transistors. Its array structure suitable for several different applications and hence it is widely used in various types of analog and digital circuits. The CSD87501LT has some of the highest levels of performance available and is ideal for use in power management, optoelectronics and wireless sensing applications.The most common type of FET is the insulated gate field effect transistor (IGFET), also referred to as the MOSFET. This type of transistor is commonly used to control current or voltage across a wide range of input and output characteristics. MOSFETs are made up of three basic structures; the gate, the drain, and the source. In an IGFET, the gate controls the electronic signal and is insulated from the rest of the transistor. The drain is an output signal, while the source is an input signal.The CSD87501LT features an array of IGFETs with integrated transistors. Each transistor consists of a gate, drain, and source. The transistors are arranged in a variety of configurations, enabling a wide range of applications. In addition, the device features an array of resistors, capacitors and other components necessary to achieve the desired operation.The CSD87501LT works by controlling the current or voltage across the gate of each transistor. This is accomplished by manipulating either the gate voltage or the source voltage. The device is able to adjust the output characteristics such as current or voltage by utilizing the gate voltage. As the gate voltage is adjusted, the current or voltage across the gate of each transistor is adjusted accordingly. This control provides precision power management and control for many different applications.The CSD87501LT is capable of providing high- speed switching and can be used in various power management applications such as voltage regulation, power factor correction, and load shedding. The device is suitable for use in optoelectronic devices such as sensors and LEDs. Additionally, the advanced features of the CSD87501LT provide increased efficiency and accuracy in wireless sensing applications resulting in a longer range and better signal reception.In conclusion, the CSD87501LT is a useful array of transistors with exceptional performance levels. It is suitable for use in a wide array of applications such as power management, optoelectronics and wireless sensing. The device is capable of high-speed switching and precisely controlling the flow of current or voltage across its gate. As such, the CSD87501LT is an impressive tool in achieving precise power and control.
The specific data is subject to PDF, and the above content is for reference
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