Allicdata Part #: | 296-35526-2-ND |
Manufacturer Part#: |
CSD87312Q3E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 30V 27A 8VSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Source 30V ... |
DataSheet: | CSD87312Q3E Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Base Part Number: | CSD87312 |
Supplier Device Package: | 8-VSON (3.3x3.3) |
Package / Case: | 8-PowerTDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 7A , 8V |
Current - Continuous Drain (Id) @ 25°C: | 27A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) Common Source |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD87312Q3E is a semiconductor device that is part of the family of field-effect transistors (FETs) within the MOSFET (Metal Oxide Semiconductor-Field Effect Transistor) array. As the name suggests, it is a three port device with General purpose applications and many distinct advantages including typical on-resistances as low as 12 mΩ and low gate charge. Due to the wide range of operating conditions that it can support, the CSD87312Q3E is useful for applications such as DC-DC converters, Uninterruptable Power Supplies (UPS), robotics, transceiver protection, and many other applications
The working principle of the CSD87312Q3E is based on the underlying concept of Field-Effect Transistors (FETs), which are three terminal devices. The CSD87312Q3E consists of two pairs of FETs connected in parallel known as CMOS pairs.The first FET is a n-channel device and the second is a p-channel device. The CMOS pair is connected together to form a single integrated device that has three terminals, the gate (G), drain (D), and source (S). When a voltage is applied to the gate of the FET, it forms an electrostatic field across its channel, creating a “on” state. The electrostatic field also affects the current flow through the channel. Depending on the voltage on the gate, the current flow from the source to the drain can be controllable.
In addition to the three terminals, the CSD87312Q3E also contains an integrated thermal protection mechanism for the FETs. It consists of a three-terminal temperature-sensitive current source, integrated between the n-channel and p-channel FETs. When temperature rises above the threshold, the current source activates and limits the threshold voltage, thus reducing the on-resistance and power dissipation to protect the FETs.
The CSD87312Q3E also has a wide range of features that make it suitable for multiple applications. It has low typical On-resistance, as low as 12 mΩ, and a high power rating of 70A. It also supports an adjustable threshold voltage, allowing for a wide range of operating conditions to be accommodated. Lastly, this device also has a low gate charge for faster switching, making it suitable for high frequency applications.
The CSD87312Q3E is an excellent choice for a wide range of applications. Thanks to its wide range of features and its integrated thermal protection mechanism, it can be used in applications such as DC-DC converters, uninterruptible power supplies, motor control, robotics, and transceiver protection, as well as many other applications.
The specific data is subject to PDF, and the above content is for reference
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