CSD87381P

CSD87381P is an advanced array of precision power MOSFETs designed for high-power applications. It features important safety characteristics and advanced features, such as the integrated charge pump which improves current handling capability and the possibility of storing energy in the integrated silicon during off-time. The arrays are available from 3 to 10 MOSFETs, supporting up to 11A/18V in most application fields.

The CSD87381P is suitable for a wide range of applications, ranging from telecom to industrial and automotive, such as power supplies and amplifiers, motor control, H-bridge circuits, and switching power stages. The array also provides the synchronization feature which enables the gate to switch in unison.

The CSD87381P is a high-voltage, high-current, low-threshold MOSFET array featuring a precision charge pump and a low drain-source on-resistance of 37Ω/50A/11V. It also offers a wide operating temperature range of -40°C to +150°C and a low current rating of 15A.

The working principle of the CSD87381P is based on the MOSFET technology, which is used to switch current in AC or DC circuits. It consists of a source and drain, along with a very thin gate between them which is used to control the flow of current. In the CSD87381P, the integrated charge pump helps to increase the current handling capabilities and decreases the turn-on time compared to conventional MOSFETs.

The CSD87381P features an integrated charge pump to facilitate fast operation time and improved current handling capabilities. The charge pump is composed of PMOS/NMOS cascodes connected to the drain, with the output connected to the source. The charge pump is controlled by a common gate, while an on-chip diode clamps the charge pump output. When the drain is high, the charge pump increasesVGS until it reaches a predetermined threshold, then turns off the PMOS devices and stops charge injection. This reduces the set-up time, allowing the device to switch faster and reduce power consumption.

To sum up, CSD87381P is an array of precision power MOSFETs designed for high-power applications. It features important safety characteristics and advanced features, such as the integrated charge pump, which improves current handling capability and offer fast operation time. Furthermore, its low drain-source on-resistance of 37Ω/50A/11V and wide operating temperature range of -40°C to +150°C makes it suitable for many applications, such as power supplies and amplifiers, motor control, H-bridge circuits and switching power stages.