Allicdata Part #: | CSD87503Q3E-ND |
Manufacturer Part#: |
CSD87503Q3E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2 N-CHANNEL 30V 10A 8SON |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Source 30V ... |
DataSheet: | CSD87503Q3E Datasheet/PDF |
Quantity: | 1000 |
Series: | NexFET™ |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 15V |
Power - Max: | 15.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
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CSD87503Q3E transistors are a type of Field Effect Transistor (FET) array, a component used for various applications in electrical engineering. Specifically, FET arrays are four-terminal devices, consisting of multiple field-effect transistors (MOSFETs) connected in parallel to give them a wide range of current and voltage capabilities. They feature high input impedance and low on-resistance, making them suitable for a variety of electronic circuit applications.
The CSD87503Q3E is a power resource MOSFET array, composed of six PowerPAK® MOSFETs in a single five-ball package. These transistors have low RDS(on) and fast switching performance, offering high-speed switching operations for a wide range of switching applications.
As FETs have lower gate capacitance than Bipolar Junction Transistors (BJTs), the CSD87503Q3E is well-suited for switching applications as it can switch faster than a BJT. Its small size and thin package enable it to be integrated into compact electronic devices like mobile phones and other electronic devices.
The array also offers an integrated temperature sensor which provides thermal monitoring of the power devices, allowing the device to be used in LED lighting, solar cells, battery charging, and grid-tied applications.
The working principle of CSD87503Q3E transistors is based on the field-effect transistor (FET) concept. In this type of transistor, there is an insulating layer between the gate and the source and drain terminals. When a voltage is applied to the gate, it produces an electrostatic field which modifies the characteristics of the channel between the source and drain, resulting in a current flow.
In the CSD87503Q3E transistor, the gate voltage affects the flow of current from the source to the drain. The current flow through the device is determined by the gate-to-source voltage and the drain-to-source voltage, with the current rising exponentially with increasing gate voltage.
The CSD87503Q3E has many uses in several applications, including communication systems, power supplies, solar cell and battery charging systems, low voltage hybrid electric vehicles, and industrial control systems. It is also used in security systems, alarm systems and other consumer electronics, as well as in automotive applications.
The CSD87503Q3E is capable of high speed operation and is therefore suitable for commercial and industrial applications where fast switching and high transfer speeds are required. It can also be used to switch large currents in an efficient manner, making it suitable for use in power circuits such as power amplifiers, power converters and power supplies.
Overall, the CSD87503Q3E is a versatile, high-performance solution for powering various applications. Used in a wide range of applications, this transistor array offers high speed and low switching losses, making it an ideal device for numerous applications.
The specific data is subject to PDF, and the above content is for reference
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