DMN601DWKQ-7 Allicdata Electronics
Allicdata Part #:

DMN601DWKQ-7DITR-ND

Manufacturer Part#:

DMN601DWKQ-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHAN 41V 60V SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 305mA (Ta) 200...
DataSheet: DMN601DWKQ-7 datasheetDMN601DWKQ-7 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04927
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The DMN601DWKQ-7 is a type of transistor array that belongs to the family of Field-Effect Transistors (FETs) as well as MOSFETs. As an array, it is composed of many transistors, each with their own function and purpose. In order for it to operate properly, it requires a supply of power and the ability to increase or decrease its current draw according to the situation. In addition, it can be assembled in either a single or dual mode, depending on the application.In order for the DMN601DWKQ-7 to do its job effectively, it relies upon a few key principles. As with any FET, the DMN601DWKQ-7 relies on the principle of source and drain current flow. This means that current flows from the source to the drain and back again, allowing the array to control a wide range of voltages and currents.In addition, the DMN601DWKQ-7 relies upon the concept of the depletion region. This special region of the transistor can be used to regulate the current flow through the array as a whole. When the correct voltage is applied, the depletion region reduces or increases the current, allowing the DMN601DWKQ-7 to adapt to ever-changing conditions.Finally, the DMN601DWKQ-7 relies upon the idea of the gate. This is a specific region of the transistor array that can be used to increase or decrease the current draw. By changing the voltage of the gate, the array’s current draw can be adjusted accordingly.The DMN601DWKQ-7 is a powerful and versatile transistor array that can be used for a number of different applications. It is often used in communication devices as a way to enable data transmission as well as to regulate current and voltage. It can also be used in power circuits as a way to ensure efficient power distribution.Thanks to its FET design, the DMN601DWKQ-7 is also particularly suited to industrial applications. It can be used to control the speed of motors, the amount of power used in certain circuits, and the amount of current drawn by each individual device.Moreover, the DMN601DWKQ-7 array is highly reliable, making it a popular choice for manufacturers and engineers alike. Thanks to its ability to adjust its current draw according to the situation, it can provide a consistent source of electricity to the various devices that it is powering. This results in less downtime and more efficient operation.Overall, the DMN601DWKQ-7 is a powerful and reliable transistor array that is well suited to a wide range of applications. Thanks to its FET design and the principles of source and drain current flow, depletion region control, and gate voltage control, it can provide a consistent and reliable source of power to a variety of devices. Its popularity among manufacturers and engineers makes it a great choice for a range of industrial applications.

The specific data is subject to PDF, and the above content is for reference

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