
Allicdata Part #: | DMN6013LFG-13-ND |
Manufacturer Part#: |
DMN6013LFG-13 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 10.3A PWDI3333-8 |
More Detail: | N-Channel 60V 10.3A (Ta), 45A (Tc) 1W (Ta) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.22187 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2577pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 55.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A (Ta), 45A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The DMN6013LFG-13 is a single field effect transistor (FET) designed as general purpose power MOSFETs. It is a “logic level” type designed to operate with gates voltages as low as 1.85V and can be interfaced directly with logic circuits.It may be used in a broad range of high-efficiency, low-loss, high-saturation-current applications.
This device provides superior switching performance due to its low on-resistance which keep the conduction losses at a minimum. This also reduces switching losses and makes it more energy efficient and more reliable. Additionally, it has excellent thermal behavior, making it ideal for high temperature applications.
The DMN6013LFG-13 is typically used for low-voltage switching applications such as DC/DC converters, DC-DC controllers, and power H-bridge inverters. It can also be used for load switching applications such as solenoid, relay, and motor control. In addition, the device can be used for power line isolation, audio amplifiers, power supplies, and telecom equipment.
The device also has additional protection features such as an overvoltage clamp protection and a failed-conduction protection, which can be enabled or disabled depending on the application. This makes the device extremely versatile and suitable for different types of applications.
The DMN6013LFG-13 is a single FET device. It works by controlling the voltage or current between its two terminals (source and drain). The gate terminal controls the channel between the source or the drain to regulate the current flow or resistance. This is achieved by changing the channel’s electric field, which is done by changing the voltage on the gate terminal. The resistance of the channel between the source and drain can be adjusted by controlling the gate voltage.
The DMN6013LFG-13 is an ideal choice for applications that require switching of larger current levels. It is an extraordinary device due to its low on-state resistance, which make this device more energy efficient, reliable and easy to use. Moreover, its features like overvoltage clamp protection and failed conduction protection make it the perfect choice for robust and reliable operation in the most challenging applications.
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