DMN6040SSDQ-13 Allicdata Electronics
Allicdata Part #:

DMN6040SSDQ-13DITR-ND

Manufacturer Part#:

DMN6040SSDQ-13

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 5.0A SO-8
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 5A (Ta) 1.3W S...
DataSheet: DMN6040SSDQ-13 datasheetDMN6040SSDQ-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.15441
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMN6040SSDQ-13 Application Field and Working Principle

DMN6040SSDQ-13 is a dual MOSFET (metal-oxide-semiconductor field-effect transistor) array used as a medium-power switching device. It is specifically designed for powermanagement applications such as motor control, power electronic switching, and etc. This device is a high-voltage array which consists of two n-channel MOSFETs, a source, a drain, and an output gate. The DMN6040SSDQ-13 utilizes the latest in advanced process technology by integrating two MOSFETs with gate drive circuits into a single package. It is rated at 150V and provides superior electrostatic discharge (ESD) protection with its patented discharge protection circuit.

The DMN6040SSDQ-13 MOSFET array has been designed to provide maximum efficiency and power handling capability. It is manufactured using a multi-layer topology which provides superior power handling and reliability. The output stage consists of two high-voltage MOSFETs which function as two isolated power switches. These switches can be used to independently switch high-voltage DC power to a load, such as a motor or lighting source.

The working principle of the DMN6040SSDQ-13 MOSFET array is relatively simple. When the input voltage is applied, the gate capacitance swiftly stores charge. This charge stored in the gate capacitance is then transferred to the gate of the MOSFET and completes the conduction path between the source and drain. The gate voltage of each MOSFET is set through the gate drive circuit, which controls the current flow between the source and drain. This allows the two MOSFETs to be used as two independent power switches.

In conclusion, the DMN6040SSDQ-13 is a dual MOSFET array specifically designed for power management applications. It consists of two high-voltage MOSFETs and utilizes the latest in advanced process technology to provide superior power handling and reliability. The output stage consists of two isolated power switches which can be used to switch high-voltage DC power to a load. The working principle of the array is relatively simple and its operation is controlled through the gate drive circuit.

The specific data is subject to PDF, and the above content is for reference

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