DMN65D8L-7 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	370mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	22pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	0.87nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 115mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	310mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>DMN65D8L-7 is a member of a large family of SPMOS (Super-junction Power Metal Oxide Semiconductors) that has been developed by STMicroelectronics. It was designed to address the increasing power efficiency needs of DC-DC converter and switch-mode power applications ranging from notebook and server power supplies to motor controllers and LED lighting converters. As such, the device is ideal for a variety of applications, thanks in part to its ability to provide superior efficiency and power conversion performance with reduced switching losses.</p><p>The DMN65D8L-7 is a high voltage MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) that works in a single junction field. It is designed to withstand very high drain-to-source voltage of 650 V and can handle large cooling currents with very small gate charge. The device also offers low output capacitance and fast switching to achieve a very high level of power efficiency and speed.</p><p>The working principle of the DMN65D8L-7 is based on the bi-directional nature of MOSFETs, which allows them to be used as switches in applications where power needs to be switched on rapidly, or off as quickly as possible. The device works by shifting the voltage from the gate to the drain source when a voltage is applied to the gate. This creates a channel of electron flow between the drain and source, which in turn allows voltage or current to pass through it. When the voltage is removed, the channel is disabled, effectively turning off the MOSFET.</p><p>The DMN65D8L-7 has found applications in DC-DC converters and switches since it provides superior power efficiency and power conversion performance with reduced switching losses. It can also be used in applications such as motor controllers and LED lighting converters due to its ability to handle high drain-to-source voltages and its small size. Additionally, the MOSFET’s fast switching ability makes it suitable for applications that require the switching frequency need to be very high.</p><p>In summary, the DMN65D8L-7 is a high voltage MOSFET that is designed to provide superior power efficiency and power conversion performance in DC-DC converters and switches. It is able to withstand very high drain-to-source voltage of 650 V and can handle large cooling currents with very small gate charge. The device’s fast switching ability also makes it suitable for applications that require the switching frequency need to be very high.</p>

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