DMN61D8LVTQ-7 Discrete Semiconductor Products

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DMN61D8LVTQ-7 is an array of power field effect transistors (FETs) manufactured by Diodes Incorporated. It is an 8-pin DPAK surface mount device that combines three DMN61D8V power MOSFETs into a single convenient package. This device is suitable for boost, SEPIC, flyback and forward converter circuits.

An important application of DMN61D8LVTQ-7 is in DC-DC switching power supplies with its capability to handle instantaneously high currents and efficiently convert between DC voltages. These devices are available in the market in the form of multi-FET arrays to reduce their footprint in circuit designs and make their integration easier.

The DMN61D8LVTQ-7 is an array of two N-Channel and one P-Channel DMN61D8V depletion mode power MOSFETs. This device has three electrically separate transistors in a single package. Each transistor comprises one source and two drain terminals, with the external connection at one of the two drain terminals and the other two terminals connected internally for capacitance reduction. The three transistors are internally connected to form a dual-sided, three-terminal switch.

The DMN61D8LVTQ-7 has a maximum rated drain current of 17A at 80°C. Its maximum power dissipation is 3W. This device has a low on-state resistance of 0.009 Ω and 0.002 Ω for N-Channel and P-Channel devices, respectively. It is also capable of operating at very high frequencies, up to 10MHz.

The working principle of the DMN61D8LVTQ-7 relies on the physics of FETs and MOSFETs. A FET or a MOSFET is a type of transistor that uses an electric field to control the size of a resistive channel through which charge carriers can flow from source to drain. When no gate signal is applied, the device behaves as an open switch and no current can flow from source to drain. On the other hand, when a gate signal is applied, the device acts as a closed switch, allowing current to flow as set by the gate signal.

In the DMN61D8LVTQ-7, the N-Channel and P-Channel FETs are placed side-by-side, with their source and drain terminals connected internally. This allows the integrated switch to either close or open upon the application of a gate signal. The result is a three-terminal switch, capable of switching high currents with very low on-state resistance, low power dissipation and high frequency operation.

The DMN61D8LVTQ-7 is a versatile part widely used in a variety of applications, such as switching power supplies, TV power supplies, SMPS, automotive and industrial electronic controls (motor speed controls, temperature controllers etc.), and other current switching circuits.

This device provides excellent performance as a switch, with its high and low side FETs allowing high-speed switching, low on-state resistance, low power dissipation and high frequency operation. It is easy to integrate into a variety of circuit designs, reducing the number of components in the design and providing an effective solution for current switching needs.

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