DMN61D8LVT-7 Allicdata Electronics

DMN61D8LVT-7 Discrete Semiconductor Products

Allicdata Part #:

DMN61D8LVT-7DITR-ND

Manufacturer Part#:

DMN61D8LVT-7

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 0.63A TSOT26
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 630mA 820mW Su...
DataSheet: DMN61D8LVT-7 datasheetDMN61D8LVT-7 Datasheet/PDF
Quantity: 9000
3000 +: $ 0.11971
Stock 9000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26
Description

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DMN61D8LVT-7 is a vertical version of power metal-oxide-semiconductor field-effect transistor (MOSFET). It typically serves as an array for applications such as motor control, robotic control, power conversion, and power management. It is designed to be used in synchronous rectifier circuits and is often used to switch off DC and AC power. It has two high-side power legs and eight low-side power legs. The low-side power legs are each connected to ground, allowing the application to control the width and intensity of the power over a set threshold.

The DMN61D8LVT-7 is part of a family of MOSFETs that includes several other versions that feature different voltage ratings, power ratings, and on-resistance ratings. All of these devices share a common pinout and are commonly used in power-switching applications. The DMN61D8LVT-7 is typically used in applications where a high current rating is required in a low profile, such as in a DC-DC converter, DC motor driver, and switch mode power supply.

The working principle of the DMN61D8LVT-7 relies on the physical phenomenon of the MOSFET, an insulated gate FET (IGFET). The MOSFET is a voltage-driven device that uses gate voltage to control a conductive channel between the source and drain terminals. In the DMN61D8LVT-7, this gate voltage gives the device the ability to switch between high and low voltage states. The device has a gate threshold voltage, also referred to as a turn-on voltage, which establishing a minimum voltage must be reached to be activated. This minimum voltage creates an electric field that attracts electrons to enter the channel and form a conductive path between the source and drain terminals. This in turn causes a current to flow through the channel, allowing power to be transferred between the two terminals.

In summary, the DMN61D8LVT-7 is an array of vertical MOSFETs that is used in power-switching applications. The DMN61D8LVT-7 is typically used in applications that require a high current rating and a low profile. Its operation is based on the MOSFET phenomenon, which allows the device to switch between high and low voltage states. By operating this device in its on-state, power is allowed to flow from the source to the drain, enabling power switching and signal transmission.

The specific data is subject to PDF, and the above content is for reference

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