DMN63D8L-13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	2.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.9nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	23.2pF @ 25V
FET Feature:	--
Power Dissipation (Max):	350mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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DMN63D8L-13 application field and working principle

Introduction

DMN63D8L-13 is a high power, low voltage power MOSFET. It belongs to the product family of P-Channel Enhancement Mode MOSFETs. It is designed to exploit the advantage of the low on-resistance of the DMN63D8L-13 device. DMN63D8L-13 is a MOSFET which can be used for both switching and amplifying applications.

Application Field

DMN63D8L-13 can be used for high-voltage switching applications. This device is typically suitable for motor control, adjustable speed drives, AC/DC converters, power supplies, and other industrial applications. It is suitable for high frequency switching, high input impedance circuits, high current switching applications, and power line noise filter. Due to its high voltage rating and low on-resistance, it can be used in applications where a large number of MOSFETs are used in parallel to achieve a higher current rating.

Advantages

The main advantages of DMN63D8L-13 are its high voltage rating, low on-resistance, and simple construction. The on-resistance of the MOSFET is determined by the gate voltage and the drain-source voltage. With a low applied gate voltage, the on-resistance of the MOSFET can be very low even at high drain-source voltages. This makes DMN63D8L-13 suitable for applications where switching speed is critical. Additionally, DMN63D8L-13 has a simple construction and is relatively simpler to use than other MOSFETs.

Working Principle

The working principle of DMN63D8L-13 is based on the drain-source voltage and the gate voltage differences between the two terminals. When a voltage potential is applied between the drain and source of the MOSFET, a current is allowed to flow from drain to source. The amount of the current flow is determined by the applied voltage and the on-resistance of the MOSFET.At the same time, the gate voltage controls the amount of charge present at the gate terminal of the MOSFET. When a negative voltage is applied to the gate terminal, the charge at the gate is depleted and the MOSFET can be switched on. When a positive voltage is applied to the gate terminal, the charge at the gate is increased and the MOSFET can be switched off. This process is known as the enhancement-mode MOSFET.

Conclusion

The DMN63D8L-13 MOSFET is suitable for applications where high voltage switching and high current switching is required. The low on-resistance and the high voltage rating makes this device ideal for high frequency switching in high input impedance circuits. The working principle of the enhancement-mode MOSFET further simplifies the applications of this device.

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