DMN65D8LDW-7

Vgs(th) (Max) @ Id:	2V @ 250µA
Base Part Number:	DMN65D8LDW
Supplier Device Package:	SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	300mW
Input Capacitance (Ciss) (Max) @ Vds:	22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	0.87nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	6 Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C:	180mA
Drain to Source Voltage (Vdss):	60V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to the DMN65D8LDW-7

The DMN65D8LDW-7 is a type of transistor array commonly used for power applications. It is a three terminal power FET that consists of 8 N-channel low on-resistance MOSFETs in a dual-in-line package. This particular device is well-designed for DC-DC converter, motor drive, and LED lighting applications.

Main Features of the DMN65D8LDW-7

The DMN65D8LDW-7 offers several unique features that make it highly suitable for certain applications. It has a low on-resistance per channel of 0.13Ω (typ.), and each channel also features a maximum drain current of 3.2A and maximum drain-source voltage of 20V. The DMN65D8LDW-7 also has a low power consumption of 0.7W, making it the ideal choice for high power applications. Additionally, the device has dual advanced gate charge pumps, and a fast matching circuit that can reduce switching losses.

Applications of the DMN65D8LDW-7

The DMN65D8LDW-7 is well-suited for a variety of applications due to its unique features. The device can be used in DC-DC converter applications because of its low on-resistance per channel, allowing it to effectively transfer power from one voltage level to another. It is also commonly used in motor drive applications because of its low power consumption and maximum drain-source voltage. Lastly, the device is often used in LED lighting applications because it has dual advanced gate charge pumps, and a fast matching circuit, which can help reduce the amount of light emitted.

Working Principle of the DMN65D8LDW-7

The DMN65D8LDW-7 utilizes a three terminal power FET, which consists of 8 N-channel low on-resistance MOSFETs. This type of transistor array is able to transfer power from one voltage level to another by using a low on-resistance per channel. The gate of each MOSFET is connected to two charge pumps in a dual advanced gate charge system , which helps to reduce switching losses. Additionally, a fast matching circuit is employed in order to reduce the amount of light emitted. The DMN65D8LDW-7 also provides a maximum drain current of 3.2A, and a maximum drain-source voltage of 20V. The device also employs a low power consumption of 0.7W. As a result, the DMN65D8LDW-7 is ideal for high power applications, such as DC-DC converters, motor drives, and LED lighting applications.

Conclusion

The DMN65D8LDW-7 is a type of transistor array commonly used for power applications. It is well-suited for DC-DC converter, motor drive, and LED lighting applications due to its low on-resistance per channel, maximum drain current of 3.2A, maximum drain-source voltage of 20V, and low power consumption of 0.7W. The device also utilizes dual advanced gate charge pumps and a fast matching circuit, which can reduce switching losses and light emission.

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