DMN61D8LVTQ-13 Allicdata Electronics
Allicdata Part #:

DMN61D8LVTQ-13DI-ND

Manufacturer Part#:

DMN61D8LVTQ-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 0.63A TSOT26
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 630mA 820mW Su...
DataSheet: DMN61D8LVTQ-13 datasheetDMN61D8LVTQ-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26
Description

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The DMN61D8LVTQ-13 belongs to a type of transistor called a field-effect transistor (FET). FETs are used extensively in many electronic devices, such as power supplies and integrated circuits. The specific type of FET is called a metal-oxide-semiconductor field-effect transistor (MOSFET). The DMN61D8LVTQ-13 is a MOSFET array.

A MOSFET array is composed of multiple MOSFET transistors connected together in parallel. Each of the MOSFET transistors contains multiple components, including a source element (S), a drain element (D), and a gate element (G). The source and drain elements form the switching path of the MOSFET. The gate element is responsible for controlling the flow of current through the switching path.

The DMN61D8LVTQ-13 is designed for high-current applications. It can be used in a variety of devices, such as power supplies and audio amplifiers. The array is composed of eight MOSFET transistors connected in parallel, allowing for high current handling capabilities (up to 13A).

The DMN61D8LVTQ-13 is a logic-level MOSFET, meaning that it operates at a lower voltage than standard MOSFETs. This makes it ideal for low-voltage applications. The device also features an improved on-resistance, meaning that it has a lower power consumption than other MOSFETs.

In terms of the working principle of the DMN61D8LVTQ-13, it is fairly straightforward. When a voltage is applied to the gate element, it creates an electric field that causes the source and drain elements to be connected. This allows current to flow through the switching path. When the voltage is removed, the electric field is reduced and the source and drain elements are disconnected, thus blocking current flow.

To summarize, the DMN61D8LVTQ-13 is a type of MOSFET array. It is designed for high-current applications and operates at low voltage. The working principle of the device is straightforward: when a voltage is applied to the gate element, the source and drain elements are connected and current is allowed to flow; when the voltage is removed, the source and drain elements are disconnected and current is blocked.

The specific data is subject to PDF, and the above content is for reference

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