DMP3007SFG-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2826pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	64.2nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	6 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The DMP3007SFG-13 is an enhancement mode insulated gate field effect transistor (IGFET) specifically developed for high-speed application. It is a N-type channel metal oxide semiconductor field effect transistor (MOSFET) that is produced using the advanced A-grade process and is available in the plastic SOT-89 Dual Flat-No-Lead (DFN) packages.

Advantages

The DMP3007SFG-13 offers distinct advantages over other devices, such as lower resistance and higher voltage. The device has an on-state resistance of 0.3 ohms and a maximum drain current of 8A, making it ideal for various applications. The device also has a maximum drain-source voltage of 350V, providing greater voltage sustainability than many other devices. These attributes make the DMP3007SFG-13 potentially desirable for many applications.

Application Field

Given its high voltage and low resistance, the DMP3007SFG-13 is ideal for applications that require power handling such as power supplies, motor controls, audio amplifiers, LED lighting, and robotics. The device can also be used in a range of other applications, including electronic switching applications and in machines where reliable power delivery is essential. In these applications, the N-type channel MOSFET provides a robust, reliable, and efficient solution.

Working Principle

The DMP3007SFG-13 is an insulated gate field effect transistor (IGFET). The device uses a gate electrode to control the flow of electrons from source to drain. The voltage applied to the gate determines whether the device is conducting or not, allowing it to be used as an electronic switch. When the drain is at a lower potential than the source, the transistor is in its “off” state. In this state, the depletion layer at the interface of the gate-to-channel is wide and provides a high resistive path to the drain. As a result, the transistor does not conduct. When the drain is at a higher potential than the source, the transistor is in its “on” state. In this state, the depletion layer at the interface of the gate-to-channel is narrow and provides a low resistive path to the drain. As a result, the transistor conducts.

Conclusion

The DMP3007SFG-13 is an N-type channel metal oxide semiconductor field effect transistor with specification that makes it ideal for a range of applications. Its low resistance and high voltage capabilities make it a suitable choice for motor control, power supplies, audio applications, and more. The device works using a gate electrode to control the flow of electrons from source to drain, making it a reliable and efficient solution for many applications.

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