DMP3007SPS-13

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DMP3007SPS-13 Application field and working principle

The DMP3007SPS-13 is a small-signal N-channel enhancement-mode power MOSFET designed for high power applications. It offers a maximum drain-source breakdown voltage (BVDSS) of 30 V and a continuous drain current of 13 A. The DMP3007SPS-13 also offers an impressive channel-to-gate breakdown voltage (BVGSS) of 65 V. It has a VGS(th) voltage of 3 V when the drain current is 0.1 A.

This device is suitable for use in power management applications such as variable speed motor control, DC-DC converters, lighting fixtures, and automotive power systems. It is also ideal for high power switching and power converters. Its wide gate-source voltage range allows for better switching control and efficiency, while its low gate charge and capacitance deliver fast switching and tight regulation.

Working Principle

The working principle of the DMP3007SPS-13 is based on the physical structure of a MOSFET that makes it possible to control or switch a large current in one direction with a small control current coming from the gate. It is built on a structure of very thin layers of N- and P-type silicon materials. The top layer is the N-channel, which is the current carrying layer, while the bottom layers are the P-type substrates. The N- and P-type materials in the device form a channel between them which is used to conduct electricity from the source to the drain when the correct gate voltage is applied. This effect is due to the voltage difference between the gate and the channel, which in turn creates an electric field that induces a change in the mobile charge carriers in the channel, thus modulating its current-carrying capacity.

The body of the device is often connected to the drain, and the gate input is applied directly or through a resistor in series, depending on the application. When the gate voltage is greater than the threshold voltage (VGS(th)), the channel conducts while if the gate voltage is below the threshold voltage, the channel is blocked since there is not enough electric field to induce a change in the mobile charge carriers. In this way, the current between the source and drain of the device is modulated, creating a switching action.

Benefits

The DMP3007SPS-13 offers many benefits for those applications that require a reliable, high voltage and high current supply. It has a low on-resistance of only 0.045 Ω, making it highly efficient even in high current applications. The wide gate-source voltage range allows for improved switching control and efficiency, which is ideal for power management applications. It has a low gate charge and capacitance, which delivers fast switching and tight regulation.

The device also offers an impressive channel-to-gate breakdown voltage of 65 V and a maximum drain-source breakdown voltage of 30 V. This ensures reliable operation in high voltage applications. Furthermore, it is environmentally friendly and RoHS compliant, making it safe to use in many industrial and automotive applications.

Conclusion

The DMP3007SPS-13 is a powerful N-channel enhancement-mode power MOSFET designed for high power applications. It offers a maximum drain-source breakdown voltage of 30 V and a continuous drain current of 13 A. The wide gate-source voltage range, low gate charge and capacitance, and low on-resistance of only 0.045 Ω make this device ideal for power management applications such as variable speed motor control, DC-DC converters, lighting fixtures, and automotive power systems. It is also environmentally friendly, RoHS compliant, and offers an impressive channel-to-gate breakdown voltage of 65 V.

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