DMP3017SFGQ-13 Allicdata Electronics
Allicdata Part #:

DMP3017SFGQ-13-ND

Manufacturer Part#:

DMP3017SFGQ-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 30V 11.5A
More Detail: P-Channel 30V 11.5A (Ta) 940mW (Ta) Surface Mount ...
DataSheet: DMP3017SFGQ-13 datasheetDMP3017SFGQ-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 940mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP3017SFGQ-13 is a transistors belonging to the family of field-effect transistors or FETs, specifically of the MOSFET or metal-oxide-semiconductor FET type which are the most widely-used type of FET today. The DMP3017SFGQ-13 is a single FET type, meaning only one type of FET structure is included in the device.

MOSFETs are a type of transistor that is used to control the flow of electrical current. They work by using an electric field to control the current flow between two terminals - the source and the drain. In a MOSFET, the channel between the source and the drain is formed by a thin layer of silicon dioxide, also known as a “gate dielectric”. This gate dielectric can be electrically charged, which creates an electric field that acts as a gate representative of the electrical current. This gate can either block or allow the flow of current depending on the voltage applied to it.

The DMP3017SFGQ-13 is a power MOSFET that can handle up to 30 volts of direct current (DC) and can be used for a variety of applications. It is designed for low power, maximum efficiency and high frequency applications, making it ideal for use in mobile devices, such as smartphones and tablets, or as a power switch. Examples of its use include powering or switching off displays or controlling the flow of power to other components. The device has a maximum drain current rating of 2.8A.

The DMP3017SFGQ-13 also features a low “on-state” resistance, or RDS (on), which means it has excellent conductivity. This makes the device ideal for applications where switching losses need to be minimized, such as in switching power supplies, AC and DC to DC converters, motor controls and lighting controls. Due to its low RDS (on) and its low gate charge, the DMP3017SFGQ-13 is also well-suited for high frequency, high load switching applications.

The DMP3017SFGQ-13 has a number of other characteristics that make it attractive for different kinds of applications. It has extremely low leakage current, a fast switching speed, and low switching noise, making it suitable for use in high-speed data communications applications. Its low thermal resistance also makes the device suitable for use in high power switching applications where thermal performance is important.

In summary, the DMP3017SFGQ-13 is a single-FET transistor belonging to the MOSFET family. It is specifically designed for low power, high efficiency and high frequency applications, such as powering and switching off displays, controlling the flow of power to other components, and high frequency, high load switching applications. It also has a low RDS (on), fast switching speed, low switching noise, and low thermal resistance, all of which make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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