DMP3018SFV-13

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The DMP3018SFV-13 is a single, monolithic N-channel enhancement-mode depletion-load transistor with an insulated gate field effect structure. It is designed to be used as an amplifier, switch, or a variable gain device in wide range of circuit applications. The DMP3018SFV-13 is an ideal device for general purpose signal and switching applications.

The DMP301 8SFV-13 is comprised of an N-type enhancement-mode field effect transistor and a depletion-load resistor in the same monolithic device. The gate is typically used to control current flow through the device. The transistor has a threshold voltage of approximately 100 millivolts. As the gate voltage is increased above this value, the current through the device increases proportionately. The depletion-load resistor reduces source-drain impedance in the device and improves on-off switch performance. The device is supplied in a TO-220AB package.

The DMP30 18SFV-13 is typically used in applications such as switching, audio amplifier, stereo systems, digital signal processing, etc. It can be used as an amplifier that allows an electrical signal to be amplified. Generally, it is employed in switching applications where it can act as an on/off switch. It can also be used as a variable gain device to control the gain of the signal being amplified. Additionally, the device can be used in digital signal processing applications to provide a low impedance switch for control.

The DMP301 8SFV-13 can operate over a range of supply voltages from -4.5V to +4.5V. Its maximum current rating is 5A, with a drain-source voltage rating of -30V. The device operates at temperatures from -55°C to +125°C. It also has a low thermal resistance junction-to-case rating of 2.5°C/W. The transistor has an on-resistance of 30mΩ and its gate maximum voltage allows a maximum switch voltage of 4V.

The working principle behind the DMP301 8SFV-13 is based on the operation of a field effect transistor (FET). A FET is a voltage controlled semiconductor device that consists of a channel of n-type or p-type semiconductor material sandwiched between two insulative layers. When a voltage is applied to the gate of the device, it induces an electric field in the channel that controls the current flow through it. By changing the applied voltage to the gate terminal, the resistance in the channel changes, and this in turn leads to a change in the current flow, allowing the device to act as an amplifier, switch, or variable gain device.

In summary, the DMP301 8SFV-13 is a single, monolithic N-channel enhancement-mode depletion-load transistor that is designed for use in a variety of applications. It operates over a range of supply voltages from -4.5V to +4.5V with a drain-source voltage rating of -30V. Its on-resistance is 30mΩ, and its gate maximum voltage allows a maximum switch voltage of 4V. The device operates by the principles of field effect transistors and is an ideal choice for use in amplifier, switch, and variable gain applications.

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