| Allicdata Part #: | FCPF11N60F-ND |
| Manufacturer Part#: |
FCPF11N60F |
| Price: | $ 1.75 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 11A TO-220F |
| More Detail: | N-Channel 600V 11A (Tc) 36W (Tc) Through Hole TO-2... |
| DataSheet: | FCPF11N60F Datasheet/PDF |
| Quantity: | 948 |
| 1 +: | $ 1.75000 |
| 10 +: | $ 1.69750 |
| 100 +: | $ 1.66250 |
| 1000 +: | $ 1.62750 |
| 10000 +: | $ 1.57500 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| Series: | SuperFET™ |
| Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FCPF11N60F is a Field-Effect Transistor (FET) commonly used for a variety of tasks. It is a single isolated N-channel MOSFET, meaning it has an N-channel controlling the flow of electrons between the source and drain. The FCPF11N60F is part of a family that is known for its low on-state resistance, making it a great choice for high-current applications.
The FCPF11N60F is employed in a variety of applications, and is suitable for a range of power switching tasks. It is most commonly used as a switch and amplifier in various industrial equipment such as solar energy control panels and automatic lighting systems. The FCPF11N60F is also used in office electronics and consumer devices such as laptop computers, tablet PCs and video gaming consoles.
How does the FCPF11N60F work? In basic terms, it consists of an insulated gate thac exerts a voltage on a dielectric material and controls the flow of electrons through a narrow passage in the N-channel instead of a metal physical object. When a voltage is applied between the gate and the source terminals, a metal-oxide-semiconductor (MOS) capacitance is formed which greatly reduces the resistance of the N-channel and allows electrons to flow from the source to the drain.When the voltage is removed, the MOS capacitance collapses which significantly increases the resistance of the N-channel and prevents the majority of the electrons from passing through it.
The FCPF11N60F is built to use a wide operating range and withstand high voltages and currents. Itutilizes a low on-state resistance which allows it to handle both high- and low-current applications. It also boasts an immense thermal resistance and an impressive breakdown voltage, meaning it can withstand even the toughest conditions.
FCPF11N60F MOSFETs are relatively easy to use, as they require a smaller number of external components than traditional transistors. They come in a variety of packages and have impressive speeds, which makes them great for high-speed switching and amplifying applications.
Overall, the FCPF11N60F is a reliable and versatile Field-Effect Transistor (FET). It is equipped with a low-on-state resistance, which allows it to handle both high- and low-current tasks. It boasts a wide operating range, impressive thermal resistance and impressive break-down voltage, making it suitable for a variety of applications. Its size and speed make it ideal for high-speed switching and amplifying tasks, as well as automated control systems.
The specific data is subject to PDF, and the above content is for reference
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FCPF11N60F Datasheet/PDF