| Allicdata Part #: | FCPF190N65S3L1-ND |
| Manufacturer Part#: |
FCPF190N65S3L1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 650V 14A TO220F-3 |
| More Detail: | N-Channel 650V 14A (Tc) 33W (Tc) Through Hole TO-2... |
| DataSheet: | FCPF190N65S3L1 Datasheet/PDF |
| Quantity: | 1000 |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1225pF @ 400V |
| Vgs (Max): | ±30V |
| Series: | SuperFET® III |
| Vgs(th) (Max) @ Id: | 4.5V @ 1.4mA |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
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The FCPF190N65S3L1 is a voltage-controlled Field Effect Transistor (FET), specifically a Metal-Oxide-Silicon FET (MOSTFET) designed to operate as a switch in various applications. It is manufactured by Vishay, a leader in the semiconductor industry. The FCPF190N65S3L1 is an N-type (or an N-channel) FET with a voltage rating of 190V, a current rating of 65A, and an on-resistance of 3Ohms. The FCPF190N65S3L1 can be used in a variety of applications, such as motor control circuits, switch mode power supplies, and power factor correction circuits.The FCPF190N65S3L1 is a three-terminal device, consisting of a source, a gate, and a drain. The source is the terminal attached to a negative voltage, while the drain is attached to a positive voltage. When an electric field is applied to the gate, the resistance between the source and the drain is reduced, allowing current to flow. The FCPF190N65S3L1 is usually operated in enhancement mode, where the voltage applied to the gate is greater than the source voltage in order to increase the drain current.The FCPF190N65S3L1 is also designed with a low input capacitance, which makes it ideal for high frequency switching applications. In these applications, the low input capacitance reduces the gate-charging time, allowing for faster switching speeds. The FCPF190N65S3L1 also has a low input impedance and a high current handling capability, making it suitable for high-power applications. The FCPF190N65S3L1 is a reliable and cost-effective switch, making it suitable for a wide range of applications. It is also eco-friendly, as it does not produce any hazardous waste. Moreover, it is easy to use and does not require any additional components to operate.In summary, the FCPF190N65S3L1 is a single-channel Field Effect Transistor designed for various switching applications. It has a low input capacitance, low input impedance, and high current-handling capacity, making it ideal for high-frequency and high-power applications. Additionally, it is reliable, cost-effective, and eco-friendly.
The specific data is subject to PDF, and the above content is for reference
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FCPF190N65S3L1 Datasheet/PDF