FCPF600N60ZL1

Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	28W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1120pF @ 25V
Vgs (Max):	±20V
Series:	SuperFET® III
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Rds On (Max) @ Id, Vgs:	600 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.4A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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FCPF600N60ZL1 is a kind of power field effect transistor integrated circuit (FET), which is mainly used in switching power supply, voltage converter, frequency converter, battery and other circuits. The FCPF600N60ZL1 is a new generation of low gate charge and low Internal gate resistance metal oxide semiconductor field effect transistor (MOSFET). In this paper, we will analyze the application field and working principle of FCPF600N60ZL1 in detail. The application field of FCPF600N60ZL1 mainly includes switching power supply application, voltage conversion application and frequency conversion application. In switching power supply application, the FCPF600N60ZL1 can be used to control the conduction angle of the bridge arm switch. The power can be realized by adjusting the gate control voltage. In voltage conversion application, FCPF600N60ZL1 can control the current and output voltage of the voltage conversion switch. In frequency conversion application, FCPF600N60ZL1 can control the output frequency of the frequency conversion switch, which can be adjusted by adjusting the gate control voltage.The working principle of FCPF600N60ZL1 is quite simple. The FCPF600N60ZL1 is a field effect transistor integrated circuit, the circuit includes two parts: a transistor and a control unit, the transistor includes source(S), drain(D), and gate(G), and the control unit includes two control electrodes which control the voltage of the gate. When a control current flows through the two control electrodes and a drain-source voltage(VDS) is applied to the drain (D) and source (S) of the transistor, the current flows through. The current flow and the applied voltage(VDG) at the gate (G) determine the conduction of the transistor. When the voltage at the gate (G) is greater than the threshold voltage (VTH), the conduction of the transistor is realized.The FCPF600N60ZL1 has many advantages, among which the low gate charge and low internal gate resistance are most prominent. The low gate charge can reduce the turn-on time of the power input, and the low internal gate resistance can reduce the switching time and reduce the heat generated during the switching process. In addition, FCPF600N60ZL1 also has the advantages of fast switching speed, high efficiency, good linearity and high density compared with the traditional power FETs.In summary, FCPF600N60ZL1 is a kind of power field effect transistor integrated circuit, which is mainly used in switching power supply, voltage converter, frequency converter, battery and other circuits. Its low gate charge and low internal gate resistance make it suitable for applications such as power switching, voltage conversion and frequency conversion.

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