FCPF11N60 Allicdata Electronics
Allicdata Part #:

FCPF11N60-ND

Manufacturer Part#:

FCPF11N60

Price: $ 1.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 11A TO220F
More Detail: N-Channel 600V 11A (Tc) 36W (Tc) Through Hole TO-2...
DataSheet: FCPF11N60 datasheetFCPF11N60 Datasheet/PDF
Quantity: 975
1 +: $ 1.64000
10 +: $ 1.59080
100 +: $ 1.55800
1000 +: $ 1.52520
10000 +: $ 1.47600
Stock 975Can Ship Immediately
$ 1.64
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: SuperFET™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The FCPF11N60 is a high-voltage power MOSFET transistor produced by Fairchild Semiconductor Corp.

Power MOSFET transistors like the FCPF11N60 are found in many types of electronics applications such as DC-DC converters, analog power supplies, and high-voltage DC circuits. These transistors are well suited for switched-mode power supply applications that require reliable and efficient power control. The broad range of applications include telecom, automotive, industrial, instrumentation, and home appliances.

The main benefit of power MOSFET transistors is their ability to switch large amounts of current in a very short amount of time. This makes them ideal for use in high-speed switching circuits, such as those found in high frequency inverters and other power control applications.By using power MOSFET transistors, power losses can be kept to a minimum since the heat generated is significantly lower than other power transistors.

The FCPF11N60 is a single N-Channel enhancement mode device. It is manufactured using DMOS technology, which is known for its reliable performance under harsh environments. The specific maximum ratings for the FCPF11N60 are 60 Volts Drain-Source Voltage, 11 Amps Continuous Drain Current (at 25°C), and 400 Watts Maximum Power Dissipation (at 25°C). The transistor features low gate charge and low gate-source capacitance for fast switching speeds.

The working principle of the FCPF11N60 can be broken down into two primary functions; everything else falls under the umbrella of its overall performance. The first function is the ability to act as a switch. In this role, the gate voltage of the transistor controls the conduction of current from the drain to the source. When the gate voltage is high, the current flows easily; when it is low, no current flows. This is what allows the transistor to be used in a wide range of switching applications.

The second primary function of the FCPF11N60 is amplification. In this role, the transistor acts like a voltage-controlled resistor, allowing the gate voltage to control the amount of current that flows from drain to source. When the voltage across the gate is increased, the amount of current flowing through the transistor is also increased. This makes the transistor well suited for use in power control applications, such as motor speed control and audio amplifier circuits.

In conclusion, the FCPF11N60 is a highly versatile power MOSFET transistor that can be used in a wide range of applications. Its ability to switch large currents quickly makes it ideal for use in high-speed switching circuits, and its low gate charge and low gate-source capacitance make it well suited for power control applications. By using the FCPF11N60, designers can be sure of reliable and efficient power control in whatever application they choose.

The specific data is subject to PDF, and the above content is for reference

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