FCPF7N60YDTU Allicdata Electronics
Allicdata Part #:

FCPF7N60YDTU-ND

Manufacturer Part#:

FCPF7N60YDTU

Price: $ 1.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 7A TO-220F
More Detail: N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-22...
DataSheet: FCPF7N60YDTU datasheetFCPF7N60YDTU Datasheet/PDF
Quantity: 468
1 +: $ 1.48000
10 +: $ 1.43560
100 +: $ 1.40600
1000 +: $ 1.37640
10000 +: $ 1.33200
Stock 468Can Ship Immediately
$ 1.48
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack, Formed Leads
Supplier Device Package: TO-220F-3 (Y-Forming)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: SuperFET™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCPF7N60YDTU is a single n-channel enhancement-mode vertical MOSFET (metal-oxide-semiconductor field-effect transistor). As one of the most commonly used MOSFET types, the device is optimized for high-speed switching, allowing for voltage and current control in a wide range of applications.

The onset of threshold voltage for the FCFP7N60YDTU is 8V, with a maximum drain-source voltage of 600V, making it a perfect choice for high voltage applications. It has a maximum drain current of 7A and a total gate charge of 45nC, ensuring high level of performance when switching large loads. This device is also well-suited for use in high frequency applications due to its low gate charge.

In terms of applications, the versatile FCFP7N60YDTU can be used in various applications in the fields of power, lighting, and communication, such as DC-DC converters, lighting ballasts, voltage regulators, and power amplifiers. In particular, this device is an ideal choice for switch mode power supply (SMPS) and lighting applications, thanks to its low on-state resistance, low gate charge, and the fast switching capability.

Looking at its working principle, the FCFP7N60YDTU is a voltage-controlled MOSFET, which means that its drain-source current is controlled by the voltage applied to its gate. As the gate voltage increases, the current flow between the drain and the source increases, effectively “opening” the drain-source path.

To turn off the device and stop the current flow, the gate voltage is reduced, ultimately resulting in the termination of the current flow. As a result, the FCFP7N60YDTU can be used as a switch, allowing the user to easily control various voltage and current parameters.

The FCFP7N60YDTU is an ideal choice for high-speed switching applications, thanks to its high current capacity, low on-state resistance, and fast switching characteristics. Its versatility makes it suitable for a variety of applications in various fields, such as power, lighting, and communication. Furthermore, its voltage- controlled MOSFET design makes it easy to control various electrical parameters with a single device.

The specific data is subject to PDF, and the above content is for reference

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