FCPF400N80Z Allicdata Electronics
Allicdata Part #:

FCPF400N80Z-ND

Manufacturer Part#:

FCPF400N80Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 11A ZNR
More Detail: N-Channel 800V 11A (Tc) 35.7W (Tc) Through Hole TO...
DataSheet: FCPF400N80Z datasheetFCPF400N80Z Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FCPF400N80Z is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is a type of field effect transistor (FET). It is a single, unipolar transistor with the benefits of low power and high current ratings, making it ideal for a wide range of applications. This article will discuss the application field and working principle of FCPF400N80Z.

The most common application of FCPF400N80Z is power electronics. This MOSFET is used in power inverters and switching circuits, where it is used to provide low voltage levels, high current output and high speed switching. This makes the FCPF400N80Z a great choice for automotive or consumer electronics applications, such as switching motors and driving lamps.It is also well-suited for audio amplifiers, radio frequency amplifiers and loudspeaker protection. As it can operate at higher temperatures than other MOSFETs, it is commonly used in medical equipment and LED TV sets, where operation at higher temperatures is usually required.

The FCPF400N80Z also has the advantage of being highly efficient, which is essential for energy conservation. This efficiency is made possible by the molybdenum silicide process used in the fabrication of the MOSFET. This process creates the optimal combination of low power consumption, low gate charges and fast switching speeds that are crucial for energy conservation in power electronics.

The working principle of the FCPF400N80Z is based on the principle of field effect transistor (FET) technology. It follows the same basic principle as a bipolar transistor, where a small amount of current is used to control the flow of a larger current between the source and drain contacts. In the case of FCPF400N80Z, a small current applied to the gate terminal of the transistor creates a strong electric field between the source and drain, which then controls the amount of current flowing between the two terminals.

This type of transistor also has the advantage of being able to quickly turn on and off, making it an ideal choice for driving circuits that require fast control. This makes it the perfect solution for applications requiring high switching speeds such as motor drives and power controllers.

All in all, the FCPF400N80Z is an excellent choice for a variety of applications due to its low power, high current rating and high speed switching abilities. It is ideal for power inverters, medical equipment, LED TV sets and loudspeaker protection. Its efficient design means it is ideal for applications where energy conservation is essential. The working principle of the FCPF400N80Z is based on the principle of field effect transistor (FET) technology, which provides fast on and off control to drive circuits.

The specific data is subject to PDF, and the above content is for reference

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