FCPF380N60E Allicdata Electronics
Allicdata Part #:

FCPF380N60E-ND

Manufacturer Part#:

FCPF380N60E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V TO-220-3
More Detail: N-Channel 600V 10.2A (Tc) 31W (Tc) Through Hole TO...
DataSheet: FCPF380N60E datasheetFCPF380N60E Datasheet/PDF
Quantity: 60
Stock 60Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCPF380N60E is a 600V N-Channel Enhancement Mode Power MOSFET developed using the latest advanced high-voltage process. This device offers excellent switching performance and superior thermal stability, making it an ideal choice for high-performance power management applications.

Application Field of FCPF380N60E

The FCPF380N60E is suitable for use in a wide variety of applications including power management, dc/dc converters, battery chargers, and other consumer electronics. The device also features a low-threshold voltage, high operating voltage, and low RDS(on) that makes it ideal for power conversion systems. The FCPF380N60E can be used in high-reliability consumer, industrial, or automotive electronics.

Working Principle of FCPF380N60E

The FCPF380N60E operates by applying voltage to the gate of the transistor. When voltage is applied to the gate, an electric field is established between the gate and the source, causing electrons to be attracted from the source and accumulated near the gate. This accumulation causes an increase in current and a decrease in voltage across the source and drain. This change in voltage and current can be used to control the flow of current through the transistor. By controlling the voltage and current applied to the gate, the FCPF380N60E can be used to regulate the power dissipation of a circuit.

The FCPF380N60E is designed to operate in a variety of operating conditions, including high temperature and high voltage. The low-threshold voltage and high operating voltage make the device suitable for current-limiting applications. The low RDS(on) makes the device suitable for power conversion systems, allowing it to control the power consumption of a circuit by controlling the current levels. In addition, the device can be used to provide over-voltage protection and short-circuit protection due to its low-on-resistance.

The FCPF380N60E is rated for a maximum operating temperature of 175°C, however, it may still be subjected to temperature swings during operation. This is due to the thermal history of the device, as it will experience temperature cycles when switching from on-state to off-state or vice versa. To ensure reliable operation over time, the device must be properly integrated into the system and tested for proper temperature cycling. This ensures the device’s reliability and helps deliver the best performance.

The FCPF380N60E offers excellent switching performance and superior thermal stability, making it an ideal choice for high-performance power management applications. The device is suitable for use in a wide variety of applications and is rated for a maximum operating temperature of 175°C, making it suitable for use in high-reliability applications. With its low-threshold voltage, high operating voltage, and low RDS(on), the FCPF380N60E is an excellent choice for power conversion systems and other high-performance applications.

The specific data is subject to PDF, and the above content is for reference

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