FCPF190N60

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	39W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2950pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	74nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	199 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20.2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The Field-Effect Transistor, commonly referred to as FET, is a type of transistor used to amplify or switch electronic signals. FETs are usually constructed from two materials; a semiconducting material such as gallium arsenide, and an insulating material such as silicon dioxide. The FET is composed of a source, a drain and a gate that control the flow of electrons.The FCPF190N60 is an example of a field-effect transistor powered by N-channel. This particular FET is a high-performance single channel, N-channel enhancement-mode silicon gate MOSFET transistor. It has a breakdown voltage rated for 190 volts and a low forward voltage drop of 1.8V. The FET also has an on-resistance of 0.03 Ω @ VGS=10V and an Id of 190mA.The FCPF190N60 can be used in many different applications, including motor control, switching, amplification, and regulation. This particular type of FET has low on-resistance and is able to wear more power than other transistors. It is robust enough to withstand higher currents and allows for better control of the motor, resulting in smoother operation. This FET is capable of operating at higher temperatures without requiring additional cooling. The FCPF190N60 can also be used as a fast switching transistor for a variety of purposes.The working principle of the FCPF190N60 is based on the action of the P-Channel and N-Channel field-effect transistors. The P-Channel and N-Channel FETs are used to control the current flow through the drain and source of the transistor. An electric field is developed between the gate and the source of the transistor and this field, as well as the current flowing through the channel, control the flow of electrical current between the source and drain.The electric field is created by the voltage applied to the gate. As the voltage applied to the gate is increased, the electric field applied to the channel increases, which in turn increases the current flowing through the channel. As the voltage is decreased, the electric field applied to the channel decreases and the current flowing through the channel decreases. In this way, the FCPF190N60 can be used to regulate, amplify, and switch signals.The FCPF190N60 is a highly reliable single channel, N-channel high-performance Field-Effect Transistor. It has a breakdown voltage of 190 volts and low forward voltage drop of 1.8V, and is capable of handling use in multiple different applications. The FET’s working principle is based on the action of the P-Channel and N-Channel FETs and by controlling the electric field and current flow between the source and drain, it can be used to regulate, amplify, and switch signals.

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