Allicdata Part #: | FCPF20N60TYDTU-ND |
Manufacturer Part#: |
FCPF20N60TYDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 20A TO-220F |
More Detail: | N-Channel 600V 20A (Tc) 39W (Tc) Through Hole TO-2... |
DataSheet: | FCPF20N60TYDTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package: | TO-220F-3 (Y-Forming) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3080pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | SuperFET™ |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FCPF20N60TYDTU is a MOSFET transistor, which belongs to a type of single field-effect transistors (FETs). It is made up of a source, a drain, a gate, and is a three-terminal device, the channel of the transistor being modulated by the voltage applied to the gate. The main application field of this FET is in switching applications and signal amplification or noise reduction.
The most noteworthy feature of this type of FET is its superior ability in signal switching when compared to a conventional BJT or bipolar junction transistor. FETs are much more efficient and can also accommodate higher voltages and currents. This makes them an ideal choice for power switching circuits and power amplifiers.
The working principle behind this type of FET is based on the conductivity modulation of the channel which exists between the source and the drain. When a voltage is applied at the gate, it attracts electrons to the gate and repels them from the gate, depending on the polarity of the voltage. This causes a change in the conductivity of the channel, thereby modulating its current flow.
In operation, the FET operates as a voltage-controlled switch, where the gate and source voltages determine the resistance between the source and drain. The higher the positive voltage on the gate relative to the source, the lower the resistance between source and drain become, thus increasing the current flow through the FET. Conversely, a higher negative gate voltage causes the resistance between source and drain to increase, thus reducing the current that can flow through the transistor.
FCPF20N60TYDTU is mainly used in electrical and electronic circuit designs where good signal amplification and noise reduction is needed. The transistor can also be used to switch high power, low voltage, and low current applications. This makes it suitable for use in automotive, consumer electronics, medical, and power management applications.
The main advantage of this type of FET is that it can handle high input voltages and currents compared to a BJT, and that it is also quite robust and reliable. This makes it an ideal choice for switching, amplifying, and noise reduction applications. It can also operate in the high frequency range, which makes it suitable for digital applications and other high-precision operations.
In summary, FCPF20N60TYDTU is a single field-effect transistor (FET) ideal for use in applications requiring good signal amplification and noise reduction. It can handle high input voltages and currents and is also quite robust and reliable. It can operate in high frequency ranges, making it suitable for digital applications and other high-precision operations.
The specific data is subject to PDF, and the above content is for reference
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