FCPF190N65FL1

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	39W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3055pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	78nC @ 10V
Series:	SuperFET® II
Rds On (Max) @ Id, Vgs:	190 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20.6A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FCPF190N65FL1 is a high-speed, high-power MOSFET device that can handle up to 65 Amps and to 190 Volts. It utilizes an innovative aluminum nitride (AIN) super-junction technology that can deliver a wide range of power and performance. It has a high power-to-area ratio, and is an ideal choice for applications requiring low on-resistance, high switching frequency, and low gate and drain charge.Application FieldHigh/mid frequency power conversion and motor drive applications, high-current applications requiring fast switching speeds, automotive voltage regulators, and high-current SMPS applications.Working PrincipleThe FCPF190N65FL1 is a MOSFET, or metal-oxide-semiconductor field effect transistor, which is created by combining ultra-thin layers of silicon and other materials. It operates differently from a traditional transistor in that it relies on power produced by an electric field and the manufacture of an insulated layer of a semiconductor material, rather than the junctions produced by conventional transistors.In a MOSFET, there are four terminals that connect to the device; the source, the body, the drain, and the gate. The gate is responsible for controlling the flow of electrons by raising or lowering its voltage, which changes the resistance of the channel between the source and the drain. The source supplies the electrons while the drain receives them. As the gate voltage increases, the number of electrons that can flow through the channel also increases, making it easier for the device to move electricity. The AIN super-junction technology used in the FCPF190N65FL1 improves the device\'s ability to handle high switching speeds and to deliver a wide range of power and performance. AIN-based transistors are made up of millions of nanometer-scale layers of semiconductor material which can handle more energy than conventional transistors. By using advanced semiconductor processing techniques, tiny charges on the surface of the device can be manipulated as well, allowing it to provide a greater degree of control over the flow of current. The device\'s low gate and drain charge is another feature which makes it a great choice for high-current applications. This reduces the amount of energy needed to switch the channel on and off, resulting in improved power efficiency and faster switching speeds.In addition to its high power-to-area ratio and its ability to deliver greater current density, theFCPF190N65FL1 is also able to withstand high temperatures, making it suitable for a range of automotive and power conversion applications.Overall, the FCPF190N65FL1 is an ideal choice for high/mid frequency power conversion and motor drive applications, high-current applications requiring fast switching speeds, automotive voltage regulators, and high-current SMPS applications. The combination of its AIN super-junction technology, low on-resistance, high switching frequency, and low gate and drain charge make it the perfect solution for a range of power and performance needs.

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