Allicdata Part #: | FCPF9N60NT-ND |
Manufacturer Part#: |
FCPF9N60NT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 9A TO220F |
More Detail: | N-Channel 600V 9A (Tc) 29.8W (Tc) Through Hole TO-... |
DataSheet: | FCPF9N60NT Datasheet/PDF |
Quantity: | 860 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 29.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1240pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | SuperMOS™ |
Rds On (Max) @ Id, Vgs: | 385 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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The FCFP9N60NT is a small-signal, N-Channel enhanced mode, field-effect transistor (FET) with a low drain-source on-state resistance and low gate charge, making it well suited for applications such as load switching, or motor drivers. It is designed to minimize the power losses while switching, due to its low cell resistance. Additionally, the single FET has an advanced high-speed switching capability along with excellent high temperature performance. This FET offers a low threshold voltage along with fast switching speed, and is designed to ensure superior electrical characteristics and long-term reliability. The FCFP9N60NT\'s small package size, and low operating temperature allow it to easily fit into small or tight packages.It is an ideal choice for applications requiring either a low drain-source on-state resistance or low gate charge current, such as in blowers, stepper motors, or auxiliary power supplies. The FET\'s low resistance and gate charge also make it an excellent choice for high-current applications such as load switching, or motor drivers.In terms of its working principle, this N-Channel FET works by the application of a voltage across the gate and the source, which forms a depletion region around the gate and inhibits current from passing from the source to the drain. By controlling the voltage applied to the gate, it is possible to control the amount of current passing through the FET.The FCFP9N60NT is a great choice for applications requiring either a low drain-source on-state resistance or low gate charge current, as it offers superior electrical characteristics and long-term reliability, as well as excellent high temperature and switching performance. Additionally, its small package size means it is ideal for applications that require a compact solution.
The specific data is subject to PDF, and the above content is for reference
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