FCPF11N60T

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The FCPF11N60T is an N-channel enhancement mode power field effect transistor (FET) with a low drain to source on-state resistance and a high current handling capacity. It combines the advanced trench MOSFET technology with a planar stripe and DMOS structure, resulting in improved speed and performance. The device has a breakdown voltage of 600 volts, an on-state resistance of approximately 11 milliohms and a maximum drain current of 11 amperes. In addition, it features a high transconductance of 230 millimhos, a fast switching time of 2 ns, and a maximum junction temperature of 175 °C.

Application Field

The FCPF11N60T is an ideal switch in power switching applications such as AC/DC converter, motor drive, switching power supply, DC/DC converter, etc. The device has a higher saturation voltage, a lower on-state voltage, a low gate drive voltage and low power dissipation. It is also used in high and low frequency inverters and power factor correction (PFC) circuits. The device can be used for wireless communication, computer and consumer applications. The device is also suitable for use in home and automotive applications.

Working Principle

The FCPF11N60T utilizes MOSFET technology in which operation of the device is dependent on the voltage applied to the gate. When the voltage applied to the gate is negative, the MOSFET is in a “cut-off” state and there is no current flow between source and drain. When the gate voltage is positive, the MOSFET is in a “linear” state and current can flow between source and drain. The gate capacitance (Cgss) controls the turn-on voltage, which is the voltage required to switch the device from cut-off to linear on state.

The FCPF11N60T has a low gate drive voltage. This means that the gate voltage only needs to be slightly positive to switch it from cut-off to linear on state. Since the turn-on voltage is low, the device can be switched on quickly, making it suitable for various high frequency switching codes. In addition, the high current carrying capacity and the low on-state resistance provide the system with uniform power output and the ability to improve efficiency. In addition, the device has an extended off switching time to prevent circuit damage due to high energy surge.

The FCPF11N60T is an ideal component for power switching applications due to its high current carrying capacity, low on-state voltage, low gate drive voltage, and fast switching time. The device is a reliable and cost effective alternative in various power switching applications. Additionally, the device has excellent thermal performance and reliability due to the advanced MOSFET technology.

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