| Allicdata Part #: | FDG6301N_D87Z-ND |
| Manufacturer Part#: |
FDG6301N_D87Z |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 25V 0.22A SC70-6 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Su... |
| DataSheet: |  FDG6301N_D87Z Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 220mA |
| Rds On (Max) @ Id, Vgs: | 4 Ohm @ 220mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9.5pF @ 10V |
| Power - Max: | 300mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-70-6 |
Description
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The FDG6301N_D87Z is an array of N-channel insulated gate field effect transistors (FETs) that can be used in a variety of applications. FETs are reliable and efficient semiconductor devices that control the flow of electrical current. The FDG6301N_D87Z is designed with a Gate-Drain-Source architecture, and can be used as a switch or amplifier in electronic circuits.The FDG6301N_D87Z is designed to withstand high temperatures and is well-suited for operating in environments with harsh conditions. This array of FETs can be used in a wide range of industrial and automotive applications, such as motor control, power conditioner, and protective relays.The FDG6301N_D87Z is made from a power double-diffused N-channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This type of transistor is used in power circuits due to its fast switching speed, high reliability, and low cost. The FDG6301N_D87Z is an array of N-channel FETs. The array consists of four power metal-oxide-semiconductor field effect transistors (MOSFETs) arranged into four separate cells, each cell connected to its own gate, drain, and source. The cells are designed with a Gate-Drain-Source architecture and can be used as a switch or amplifier in electronic circuits. The Gate of the FDG6301N_D87Z is the control terminal, which is used to control the flow of electrical current through the cell. Depending on the voltage applied to the Gate, the drain-source resistance of the cell is changed. With a low Gate voltage, the resistance is low and the cell will be in a conducting state. With a higher Gate voltage, the resistance is higher, and the cell will be in a non-conducting state. The Drain and Source terminals of the FDG6301N_D87Z are connected to external sources of current. The Drain is where the current enters the cell, and the Source is where the current exits the cell. The Drain and Source terminals can be connected to either a power source such as a battery or a voltage source like a voltage regulator. The FDG6301N_D87Z can be used in a variety of applications, including motor control, power conditioner, and protective relays. By controlling the amount of voltage applied to the Gate, the user can control the current entering and exiting the cell. This can be used to switch on and off certain components in the circuit or to regulate the output voltage of the circuit. Overall, the FDG6301N_D87Z is a reliable and efficient array of N-channel FETs that can be used in a variety of applications. With its fast switching speed, high reliability, and low cost, it is an ideal option for power electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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