FDG6314P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDG6314P is a power FET array built on Fairchild Semiconductor\'s advanced PowerTrench process technology. The device has a breakdown voltage of 30V, 3.3V @ 10A and a maximum drain source voltage of 20V, which allows it to be potentially used in a vast number of applications. Because of its high input impedance, the FDG6314P is well suited for use in a variety of power control and switching applications, including DC/DC and AC/DC conversion and regulated power supplies.

The FDG6314P is a single low-side FET array that can be used to provide logic-level control of high current loads. Its built-in ESD protection makes it ideal for automotive applications, where reliability and protection are key requirements. The device features a built-in on-resistance of 0.3 Ohms, which results in very low levels of power dissipation.

One of the most important features of the FDG6314P is its exceptional current handling capability. The device can handle up to 10A, which means it can be used in a variety of power applications, such as DC/DC power conversion and motor control. Furthermore, by adding external circuitry, the device can be used to generate PWM signals for various motor control applications.

The FDG6314P is a low-side N-channel power FET array, meaning that the FETs have a source and a drain, which is connected to the voltage supply. The source is connected to ground, and the drain is connected to the load. The FETs are turned off when their control is low, and turned on when the control is high. The FDG6314P features an integrated charge pump, allowing it to achieve the high level of precision required for motor control applications.

In addition to its excellent current handling capabilities, the FDG6314P offers several other features that make it an attractive choice for power control and switching applications. The device offers overvoltage protection, which prevents damage caused by system overvoltages. Furthermore, the device features protection against ESD and latch-up, which protect the device against potential damage caused by human contact.

The FDG6314P is an ideal choice for any application requiring logic control of high current loads. Its low on-resistance results in low levels of power dissipation, and its high current handling capability means it can easily handle high power applications. Its built-in ESD protection ensures reliable operation in power applications. Furthermore, the device can be used to generate PWM signals to control motors, making it an excellent choice for motor control applications. All in all, the FDG6314P is a robust and reliable power FET array that is suitable for many power control and switching applications.

The specific data is subject to PDF, and the above content is for reference