FDG6318P Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A FDG6318P is an array of Power Field Effect Transistors (FETs) which offers low on-resistance and low gate-charge performance. It consists of a body of multiple transistors connected in series and parallel configurations, thus increasing its current carrying capability across the entire array. This array is ideal for a wide range of applications, such as power supply circuits, motor control, and LED driver applications.

The FDG6318P is specified to be capable of driving currents up to 500 mA and can be used in both DC and AC operating conditions. It offers low on-resistance and low gate-charge performance, making it suitable for high efficiency power electronics applications. The array is comprised of two terminal N- and P-channel enhancement mode MOSFETs with a low drive voltage (4V min) for operation in both AC and DC conditions. The drain voltage is additionally protected against reverse current and electrostatic discharge.

The FDG6318P offers low on-resistance thanks to its low gate-charge performance. The low gate-charge reduces the power losses associated with biasing the transistor and thus helps in achieving high efficiency in power electronic applications. Additionally, the device offers a high endurance capability with fast switching speed and low gate-threshold voltage.

The FDG6318P array is primarily used in power supply circuits such as inverters, power conversion circuits, and motor control applications. It is also suitable for integrated power switching applications, such as LED driver circuits. In motor control applications, the power FET array can be used to provide the required current to drive the motor and enable precise control of the motor’s speed and torque. In LED driver circuits, it can be used to reduce the power dissipation by providing the precise current to drive the LED. The precise control of current enables the LED to be illuminated with the desired brightness.

The FDG6318P array works by having multiple transistors connected in series and parallel to "share" the load. The FET array begins to conduct when a certain amount of voltage is applied to the gate terminal. This voltage triggers the P-channel MOSFETs to conduct. When the voltage exceeds the threshold voltage, the N-channel MOSFETs start to conduct. The combination of these two elements creates a device with a low on-resistance, making it suitable for a range of power applications.

The FDG6318P array is a useful device for power electronics applications due to its low on-resistance and low gate-charge performance. It is capable of handling high currents, making it suitable for a range of applications such as power supply circuits, motor control applications, and LED driver circuits. Additionally, the device has a high endurance capability with fast switching speed and low gate-threshold voltage.

The specific data is subject to PDF, and the above content is for reference